Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp _2 ) and oxygen (O _2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp _2 pulse time, and O _2 plasma p...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ab82c9 |
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| author | Lin-Yan Xie Dong-Qi Xiao Jun-Xiang Pei Jingyong Huo Xiaohan Wu Wen-Jun Liu Shi-Jin Ding |
| author_facet | Lin-Yan Xie Dong-Qi Xiao Jun-Xiang Pei Jingyong Huo Xiaohan Wu Wen-Jun Liu Shi-Jin Ding |
| author_sort | Lin-Yan Xie |
| collection | DOAJ |
| description | Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp _2 ) and oxygen (O _2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp _2 pulse time, and O _2 plasma pulse time. In terms of deposition temperatures between 225 and 275 °C, a stable growth rate of ∼0.17 Å/cycle is obtained, meanwhile, the deposited films contain Ni(II)−O, Ni(III)−O, Ni(II)−OH, C−C bonds and metallic Ni atoms, and exhibit a smooth surface with root-mean-square roughness of ≤0.37 nm. As the deposition temperature increases from 150 to 350 °C, the deposited NiO film changes from an amorphous state to a NiO (200) orientation-dominated texture and further to NiO (111) and (200) orientations concomitant polycrystalline one; at the same time, the transmittance of the film shows a decline tendency, and the optical band gap decreases from 3.69 to 3.48 eV. Furthermore, it is found that the deposited NiO film behaves like a dielectric rather than a semiconductor, and for the NiO film deposited at 250 °C, a dielectric constant of 16.7 is demonstrated together with a film composition of 51.6% Ni, 40% O and 8.4% C. |
| first_indexed | 2024-03-12T15:37:18Z |
| format | Article |
| id | doaj.art-62b216b05ff74550a8b1640ba8b98dd3 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:37:18Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-62b216b05ff74550a8b1640ba8b98dd32023-08-09T16:10:25ZengIOP PublishingMaterials Research Express2053-15912020-01-017404640110.1088/2053-1591/ab82c9Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursorsLin-Yan Xie0Dong-Qi Xiao1Jun-Xiang Pei2Jingyong Huo3Xiaohan Wu4Wen-Jun Liu5Shi-Jin Ding6https://orcid.org/0000-0002-5766-089XState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, People’s Republic of ChinaNickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp _2 ) and oxygen (O _2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp _2 pulse time, and O _2 plasma pulse time. In terms of deposition temperatures between 225 and 275 °C, a stable growth rate of ∼0.17 Å/cycle is obtained, meanwhile, the deposited films contain Ni(II)−O, Ni(III)−O, Ni(II)−OH, C−C bonds and metallic Ni atoms, and exhibit a smooth surface with root-mean-square roughness of ≤0.37 nm. As the deposition temperature increases from 150 to 350 °C, the deposited NiO film changes from an amorphous state to a NiO (200) orientation-dominated texture and further to NiO (111) and (200) orientations concomitant polycrystalline one; at the same time, the transmittance of the film shows a decline tendency, and the optical band gap decreases from 3.69 to 3.48 eV. Furthermore, it is found that the deposited NiO film behaves like a dielectric rather than a semiconductor, and for the NiO film deposited at 250 °C, a dielectric constant of 16.7 is demonstrated together with a film composition of 51.6% Ni, 40% O and 8.4% C.https://doi.org/10.1088/2053-1591/ab82c9atomic layer depositionnickel oxidenano-films |
| spellingShingle | Lin-Yan Xie Dong-Qi Xiao Jun-Xiang Pei Jingyong Huo Xiaohan Wu Wen-Jun Liu Shi-Jin Ding Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors Materials Research Express atomic layer deposition nickel oxide nano-films |
| title | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| title_full | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| title_fullStr | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| title_full_unstemmed | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| title_short | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| title_sort | growth physical and electrical characterization of nickel oxide thin films prepared by plasma enhanced atomic layer deposition using nickelocene and oxygen precursors |
| topic | atomic layer deposition nickel oxide nano-films |
| url | https://doi.org/10.1088/2053-1591/ab82c9 |
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