Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp _2 ) and oxygen (O _2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp _2 pulse time, and O _2 plasma p...

Full description

Bibliographic Details
Main Authors: Lin-Yan Xie, Dong-Qi Xiao, Jun-Xiang Pei, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
atomic layer deposition
nickel oxide
nano-films
Online Access:https://doi.org/10.1088/2053-1591/ab82c9

Similar Items

Similar Items