Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl<sub>2</sub>/BCl<sub>3</sub>/SF<sub>6</sub>-mixed gas plasma. This etc...

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Bibliographic Details
Main Authors: Ya-Chun Chang, Yu-Li Ho, Tz-Yan Huang, Ding-Wei Huang, Chao-Hsin Wu
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Micromachines
Subjects:
gallium nitride (GaN)
enhancement-mode
p-GaN HEMT
multi-finger layout
self-terminating etching
Online Access:https://www.mdpi.com/2072-666X/12/4/432

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