Fabrication of SWCNT-Graphene Field-Effect Transistors
Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-09-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/6/9/1317 |
| _version_ | 1818546296087117824 |
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| author | Shuangxi Xie Niandong Jiao Steve Tung Lianqing Liu |
| author_facet | Shuangxi Xie Niandong Jiao Steve Tung Lianqing Liu |
| author_sort | Shuangxi Xie |
| collection | DOAJ |
| description | Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices. |
| first_indexed | 2024-12-12T07:51:18Z |
| format | Article |
| id | doaj.art-631552699eb44a57b18640a8f3f87140 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-12T07:51:18Z |
| publishDate | 2015-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-631552699eb44a57b18640a8f3f871402022-12-22T00:32:26ZengMDPI AGMicromachines2072-666X2015-09-01691317133010.3390/mi6091317mi6091317Fabrication of SWCNT-Graphene Field-Effect TransistorsShuangxi Xie0Niandong Jiao1Steve Tung2Lianqing Liu3State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, ChinaState Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, ChinaState Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, ChinaState Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, ChinaGraphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.http://www.mdpi.com/2072-666X/6/9/1317grapheneSWCNTall-carbonFETsdielectrophoresisAFMinterdigitated electrodes |
| spellingShingle | Shuangxi Xie Niandong Jiao Steve Tung Lianqing Liu Fabrication of SWCNT-Graphene Field-Effect Transistors Micromachines graphene SWCNT all-carbon FETs dielectrophoresis AFM interdigitated electrodes |
| title | Fabrication of SWCNT-Graphene Field-Effect Transistors |
| title_full | Fabrication of SWCNT-Graphene Field-Effect Transistors |
| title_fullStr | Fabrication of SWCNT-Graphene Field-Effect Transistors |
| title_full_unstemmed | Fabrication of SWCNT-Graphene Field-Effect Transistors |
| title_short | Fabrication of SWCNT-Graphene Field-Effect Transistors |
| title_sort | fabrication of swcnt graphene field effect transistors |
| topic | graphene SWCNT all-carbon FETs dielectrophoresis AFM interdigitated electrodes |
| url | http://www.mdpi.com/2072-666X/6/9/1317 |
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