A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-01-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/28/3/1334 |
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| author | Xianhe Sang Yongfu Wang Qinglin Wang Liangrui Zou Shunhao Ge Yu Yao Xueting Wang Jianchao Fan Dandan Sang |
| author_facet | Xianhe Sang Yongfu Wang Qinglin Wang Liangrui Zou Shunhao Ge Yu Yao Xueting Wang Jianchao Fan Dandan Sang |
| author_sort | Xianhe Sang |
| collection | DOAJ |
| description | Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics. |
| first_indexed | 2024-03-11T09:32:21Z |
| format | Article |
| id | doaj.art-631b3414015a4ff1a2338d93cabcdd59 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-11T09:32:21Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-631b3414015a4ff1a2338d93cabcdd592023-11-16T17:30:59ZengMDPI AGMolecules1420-30492023-01-01283133410.3390/molecules28031334A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n HeterojunctionXianhe Sang0Yongfu Wang1Qinglin Wang2Liangrui Zou3Shunhao Ge4Yu Yao5Xueting Wang6Jianchao Fan7Dandan Sang8Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaShandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., Liaocheng 252000, ChinaShandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, ChinaDiamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.https://www.mdpi.com/1420-3049/28/3/1334diamondheterojunctionnonmetallic oxideoptoelectronic devices |
| spellingShingle | Xianhe Sang Yongfu Wang Qinglin Wang Liangrui Zou Shunhao Ge Yu Yao Xueting Wang Jianchao Fan Dandan Sang A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction Molecules diamond heterojunction nonmetallic oxide optoelectronic devices |
| title | A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction |
| title_full | A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction |
| title_fullStr | A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction |
| title_full_unstemmed | A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction |
| title_short | A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction |
| title_sort | review on optoelectronical properties of non metal oxide diamond based p n heterojunction |
| topic | diamond heterojunction nonmetallic oxide optoelectronic devices |
| url | https://www.mdpi.com/1420-3049/28/3/1334 |
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