A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high...
Main Authors: | Xianhe Sang, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, Dandan Sang |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-01-01
|
Series: | Molecules |
Subjects: | |
Online Access: | https://www.mdpi.com/1420-3049/28/3/1334 |
Similar Items
-
Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction
by: Qinglin Wang, et al.
Published: (2022-10-01) -
Research progress of optoelectronic devices based on diamond materials
by: Houzhi Fei, et al.
Published: (2023-08-01) -
A Review on the Progress of Optoelectronic Devices Based on TiO<sub>2</sub> Thin Films and Nanomaterials
by: Shunhao Ge, et al.
Published: (2023-03-01) -
Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS<sub>2</sub> Nanomaterials: A Review
by: Changxing Li, et al.
Published: (2024-07-01) -
Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction
by: Yu Yao, et al.
Published: (2020-12-01)