Present status of amorphous In–Ga–Zn–O thin-film transistors

Present status of amorphous In–Ga–Zn–O thin-film transistors

The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs sa...

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Bibliographic Details
Main Author:	Toshio Kamiya, Kenji Nomura and Hideo Hosono
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2010-01-01
Series:	Science and Technology of Advanced Materials
Online Access:	http://iopscience.iop.org/1468-6996/11/4/044305

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