Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics

In this work, SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (Gd<sub>2</sub>O<sub>3</sub>, CeO<sub>2</sub>, MnO<sub>2</sub> and Cr<...

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Main Authors: Shaozhao Wang, Huajiang Zhou, Daowen Wu, Lang Li, Yu Chen
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/20/6227
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author Shaozhao Wang
Huajiang Zhou
Daowen Wu
Lang Li
Yu Chen
author_facet Shaozhao Wang
Huajiang Zhou
Daowen Wu
Lang Li
Yu Chen
author_sort Shaozhao Wang
collection DOAJ
description In this work, SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (Gd<sub>2</sub>O<sub>3</sub>, CeO<sub>2</sub>, MnO<sub>2</sub> and Cr<sub>2</sub>O<sub>3</sub>) were fabricated by a conventional solid-state reaction route. The effects of oxide additives on the phase structures and electrical properties of the SBT ceramics were investigated. Firstly, X-ray diffraction analysis revealed that all these oxides-modified SBT ceramics prepared presented a single SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> phase with orthorhombic symmetry and space group of <i>Bb</i>21<i>m</i>, the change in cell parameters indicated that these oxide additives had diffused into the crystalline lattice of SBT and formed solid solutions with it. The SBT ceramics with the addition of MnO<sub>2</sub> achieved a high relative density of up to 97%. The temperature dependence of dielectric constant showed that the addition of Gd<sub>2</sub>O<sub>3</sub> could increase the <i>T</i><sub>C</sub> of SBT. At a low frequency of 100 Hz, those dielectric loss peaks appearing around 500 °C were attributed to the space-charge relaxation as an extrinsic dielectric response. The synergetic doping of CeO<sub>2</sub> and Cr<sub>2</sub>O<sub>3</sub> could reduce the space-charge-induced dielectric relaxation of SBT. The piezoelectricity measurement and electro-mechanical resonance analysis found that Cr<sub>2</sub>O<sub>3</sub> can significantly enhance both <i>d</i><sub>33</sub> and <i>k</i><sub>p</sub> of SBT, and produce a higher phase-angle maximum at resonance. Such an enhanced piezoelectricity was attributed to the further increased orthorhombic distortion after Ti<sup>4+</sup> at B-site was substituted by Cr<sup>3+</sup>. Among these compositions, Sr<sub>0.92</sub>Gd<sub>0.053</sub>Bi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> + 0.2 wt% Cr<sub>2</sub>O<sub>3</sub> (SGBT-Cr) presented the best electrical properties including <i>T</i><sub>C</sub> = 555 °C, <i>tan δ =</i> 0.4%, <i>k</i><sub>p</sub> = 6.35% and <i>d</i><sub>33</sub> = 28 pC/N, as well as a good thermally-stable piezoelectricity that the value of <i>d</i><sub>33</sub> was decreased by only 3.6% after being annealed at 500 °C for 4 h. Such advantages provided this material with potential applications in the high-stability piezoelectric sensors operated below 500 °C.
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spelling doaj.art-63469647d764451fa2149f4c0721cdee2023-11-22T19:01:10ZengMDPI AGMaterials1996-19442021-10-011420622710.3390/ma14206227Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric CeramicsShaozhao Wang0Huajiang Zhou1Daowen Wu2Lang Li3Yu Chen4School of Mechanical Engineering, Chengdu University, Chengdu 610106, ChinaSchool of Mechanical Engineering, Chengdu University, Chengdu 610106, ChinaSchool of Mechanical Engineering, Chengdu University, Chengdu 610106, ChinaKey Laboratory of Deep Earth Science and Engineering, Ministry of Education, Sichuan University, Chengdu 610065, ChinaSchool of Mechanical Engineering, Chengdu University, Chengdu 610106, ChinaIn this work, SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (Gd<sub>2</sub>O<sub>3</sub>, CeO<sub>2</sub>, MnO<sub>2</sub> and Cr<sub>2</sub>O<sub>3</sub>) were fabricated by a conventional solid-state reaction route. The effects of oxide additives on the phase structures and electrical properties of the SBT ceramics were investigated. Firstly, X-ray diffraction analysis revealed that all these oxides-modified SBT ceramics prepared presented a single SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> phase with orthorhombic symmetry and space group of <i>Bb</i>21<i>m</i>, the change in cell parameters indicated that these oxide additives had diffused into the crystalline lattice of SBT and formed solid solutions with it. The SBT ceramics with the addition of MnO<sub>2</sub> achieved a high relative density of up to 97%. The temperature dependence of dielectric constant showed that the addition of Gd<sub>2</sub>O<sub>3</sub> could increase the <i>T</i><sub>C</sub> of SBT. At a low frequency of 100 Hz, those dielectric loss peaks appearing around 500 °C were attributed to the space-charge relaxation as an extrinsic dielectric response. The synergetic doping of CeO<sub>2</sub> and Cr<sub>2</sub>O<sub>3</sub> could reduce the space-charge-induced dielectric relaxation of SBT. The piezoelectricity measurement and electro-mechanical resonance analysis found that Cr<sub>2</sub>O<sub>3</sub> can significantly enhance both <i>d</i><sub>33</sub> and <i>k</i><sub>p</sub> of SBT, and produce a higher phase-angle maximum at resonance. Such an enhanced piezoelectricity was attributed to the further increased orthorhombic distortion after Ti<sup>4+</sup> at B-site was substituted by Cr<sup>3+</sup>. Among these compositions, Sr<sub>0.92</sub>Gd<sub>0.053</sub>Bi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> + 0.2 wt% Cr<sub>2</sub>O<sub>3</sub> (SGBT-Cr) presented the best electrical properties including <i>T</i><sub>C</sub> = 555 °C, <i>tan δ =</i> 0.4%, <i>k</i><sub>p</sub> = 6.35% and <i>d</i><sub>33</sub> = 28 pC/N, as well as a good thermally-stable piezoelectricity that the value of <i>d</i><sub>33</sub> was decreased by only 3.6% after being annealed at 500 °C for 4 h. Such advantages provided this material with potential applications in the high-stability piezoelectric sensors operated below 500 °C.https://www.mdpi.com/1996-1944/14/20/6227SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>high-temperature piezoceramicsoxide additivescurie temperaturepiezoelectric coefficiention substitution
spellingShingle Shaozhao Wang
Huajiang Zhou
Daowen Wu
Lang Li
Yu Chen
Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
Materials
SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>
high-temperature piezoceramics
oxide additives
curie temperature
piezoelectric coefficient
ion substitution
title Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
title_full Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
title_fullStr Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
title_full_unstemmed Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
title_short Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> High-Temperature Piezoelectric Ceramics
title_sort effects of oxide additives on the phase structures and electrical properties of srbi sub 4 sub ti sub 4 sub o sub 15 sub high temperature piezoelectric ceramics
topic SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>
high-temperature piezoceramics
oxide additives
curie temperature
piezoelectric coefficient
ion substitution
url https://www.mdpi.com/1996-1944/14/20/6227
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