High Tunable BaTi<sub>x</sub>Zr<sub>1-x</sub>O<sub>3</sub> Films on Dielectric Substrate for Microwave Applications
In this study, the structural and microwave properties of BaTiZrO<sub>3</sub> films deposited on alumina substrate were investigated. The films were deposited by RF magnetron sputtering in Ar/O<sub>2</sub> ambient atmosphere. The research of the island films at the initial st...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/27/18/6086 |
| Summary: | In this study, the structural and microwave properties of BaTiZrO<sub>3</sub> films deposited on alumina substrate were investigated. The films were deposited by RF magnetron sputtering in Ar/O<sub>2</sub> ambient atmosphere. The research of the island films at the initial stages of the growth showed that the pyramidal type of growth prevails. It was demonstrated that as-deposited film is a BaZrTiO<sub>3</sub> solid solution with a deficiency of titanium compared to the target. The air annealing at temperatures of 1100–1200 °C leads to the formation of a well-formed crystalline solid solution of BaZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub> with a predominant orientation (<i>h</i>00). The investigation of microwave parameters of the films fabricated at different conditions showed that the best performance with the tunability of 4.6 (78%), and the Q-factor of 18 to 40 at 2 GHz was achieved at annealing temperature of 1150 °C. |
|---|---|
| ISSN: | 1420-3049 |