Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

Direct growth of large-area graphene on dielectric substrates is a promising route to wafer scale integration. Here the authors use a rapid thermal annealing process to grow graphene layers on four-inch diameter polycrystalline diamond, eliminating the need for transfer.

Bibliographic Details
Main Authors: Diana Berman, Sanket A. Deshmukh, Badri Narayanan, Subramanian K. R. S. Sankaranarayanan, Zhong Yan, Alexander A. Balandin, Alexander Zinovev, Daniel Rosenmann, Anirudha V. Sumant
Format: Article
Language:English
Published: Nature Portfolio 2016-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12099
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author Diana Berman
Sanket A. Deshmukh
Badri Narayanan
Subramanian K. R. S. Sankaranarayanan
Zhong Yan
Alexander A. Balandin
Alexander Zinovev
Daniel Rosenmann
Anirudha V. Sumant
author_facet Diana Berman
Sanket A. Deshmukh
Badri Narayanan
Subramanian K. R. S. Sankaranarayanan
Zhong Yan
Alexander A. Balandin
Alexander Zinovev
Daniel Rosenmann
Anirudha V. Sumant
author_sort Diana Berman
collection DOAJ
description Direct growth of large-area graphene on dielectric substrates is a promising route to wafer scale integration. Here the authors use a rapid thermal annealing process to grow graphene layers on four-inch diameter polycrystalline diamond, eliminating the need for transfer.
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spelling doaj.art-6373611551d54817bb457f812c0e44aa2022-12-21T23:08:59ZengNature PortfolioNature Communications2041-17232016-07-01711810.1038/ncomms12099Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scaleDiana Berman0Sanket A. Deshmukh1Badri Narayanan2Subramanian K. R. S. Sankaranarayanan3Zhong Yan4Alexander A. Balandin5Alexander Zinovev6Daniel Rosenmann7Anirudha V. Sumant8Center for Nanoscale Materials, Argonne National LaboratoryCenter for Nanoscale Materials, Argonne National LaboratoryCenter for Nanoscale Materials, Argonne National LaboratoryCenter for Nanoscale Materials, Argonne National LaboratoryDepartment of Electrical and Computer Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California—RiversideDepartment of Electrical and Computer Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California—RiversideMaterials Science Division, Argonne National LaboratoryCenter for Nanoscale Materials, Argonne National LaboratoryCenter for Nanoscale Materials, Argonne National LaboratoryDirect growth of large-area graphene on dielectric substrates is a promising route to wafer scale integration. Here the authors use a rapid thermal annealing process to grow graphene layers on four-inch diameter polycrystalline diamond, eliminating the need for transfer.https://doi.org/10.1038/ncomms12099
spellingShingle Diana Berman
Sanket A. Deshmukh
Badri Narayanan
Subramanian K. R. S. Sankaranarayanan
Zhong Yan
Alexander A. Balandin
Alexander Zinovev
Daniel Rosenmann
Anirudha V. Sumant
Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
Nature Communications
title Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
title_full Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
title_fullStr Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
title_full_unstemmed Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
title_short Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
title_sort metal induced rapid transformation of diamond into single and multilayer graphene on wafer scale
url https://doi.org/10.1038/ncomms12099
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