Growth of high quality (In,Ga)N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy
Epitaxial growth of (In,Ga)N films on O-face ZnO substrates was studied via plasma-assisted molecular beam epitaxy. Atomically smooth GaN films, showing step edges, were grown at low temperatures to suppress the interfacial reaction between nitrides and the ZnO substrate at elevated temperatures usi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0012854 |