A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2022-12-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0118778 |
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author | Yulong Zhu Xinzhe Wang Chenxi Zhu Zhaoyuan Chen Zhisheng Huang Zhanhong Jin Yang Li Futian Liang Shengkai Liao Chengzhi Peng Ge Jin |
author_facet | Yulong Zhu Xinzhe Wang Chenxi Zhu Zhaoyuan Chen Zhisheng Huang Zhanhong Jin Yang Li Futian Liang Shengkai Liao Chengzhi Peng Ge Jin |
author_sort | Yulong Zhu |
collection | DOAJ |
description | Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems. |
first_indexed | 2024-04-10T21:26:04Z |
format | Article |
id | doaj.art-6395b93b2c3843049a6d3e372e002d59 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-04-10T21:26:04Z |
publishDate | 2022-12-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-6395b93b2c3843049a6d3e372e002d592023-01-19T16:47:09ZengAIP Publishing LLCAIP Advances2158-32262022-12-011212125025125025-1010.1063/5.0118778A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distributionYulong Zhu0Xinzhe Wang1Chenxi Zhu2Zhaoyuan Chen3Zhisheng Huang4Zhanhong Jin5Yang Li6Futian Liang7Shengkai Liao8Chengzhi Peng9Ge Jin10State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaSchool of Cyberspace Security, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaDepartment of Modern Physics, University of Science and Technology of China, Hefei 230026, ChinaDepartment of Modern Physics, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, ChinaState Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, ChinaQuantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.http://dx.doi.org/10.1063/5.0118778 |
spellingShingle | Yulong Zhu Xinzhe Wang Chenxi Zhu Zhaoyuan Chen Zhisheng Huang Zhanhong Jin Yang Li Futian Liang Shengkai Liao Chengzhi Peng Ge Jin A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution AIP Advances |
title | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
title_full | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
title_fullStr | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
title_full_unstemmed | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
title_short | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
title_sort | laser source driver in 0 18 μm sige bicmos technology for high speed quantum key distribution |
url | http://dx.doi.org/10.1063/5.0118778 |
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