Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors
Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical properties of ITO TFTs with the four categories of source/dr...
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MDPI AG
2022-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/11/1896 |
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| author | Qi Li Dedong Han Junchen Dong Dengqin Xu Yue Li Yi Wang Xing Zhang |
| author_facet | Qi Li Dedong Han Junchen Dong Dengqin Xu Yue Li Yi Wang Xing Zhang |
| author_sort | Qi Li |
| collection | DOAJ |
| description | Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical properties of ITO TFTs with the four categories of source/drain electrodes. Interestingly, the ITO TFT with an Al source/drain electrode exhibits better device performance, such as a field-effect mobility (μ<sub>FE</sub>) of 26.45 cm<sup>2</sup>/Vs, a reasonable turn-on voltage (V<sub>ON</sub>) of 2.7 V, and a steep subthreshold swing (SS) of 201.50 mV/decade. The contact properties of ITO TFTs are further analyzed, and the results show that the device with an Al electrode exhibits lower contact resistance than the other devices. However, the devices with the four electrode materials all reveal excellent stability under negative bias illumination stress (NBIS) with |ΔV<sub>TH</sub>| < 1 V. This work paves the way for the practical applications of ITO TFTs in next-generation displays. |
| first_indexed | 2024-03-09T18:49:54Z |
| format | Article |
| id | doaj.art-63ab67987ff348cf92398e53ad5d3dc0 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T18:49:54Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-63ab67987ff348cf92398e53ad5d3dc02023-11-24T05:54:51ZengMDPI AGMicromachines2072-666X2022-11-011311189610.3390/mi13111896Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film TransistorsQi Li0Dedong Han1Junchen Dong2Dengqin Xu3Yue Li4Yi Wang5Xing Zhang6School of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaOxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical properties of ITO TFTs with the four categories of source/drain electrodes. Interestingly, the ITO TFT with an Al source/drain electrode exhibits better device performance, such as a field-effect mobility (μ<sub>FE</sub>) of 26.45 cm<sup>2</sup>/Vs, a reasonable turn-on voltage (V<sub>ON</sub>) of 2.7 V, and a steep subthreshold swing (SS) of 201.50 mV/decade. The contact properties of ITO TFTs are further analyzed, and the results show that the device with an Al electrode exhibits lower contact resistance than the other devices. However, the devices with the four electrode materials all reveal excellent stability under negative bias illumination stress (NBIS) with |ΔV<sub>TH</sub>| < 1 V. This work paves the way for the practical applications of ITO TFTs in next-generation displays.https://www.mdpi.com/2072-666X/13/11/1896InSnO (ITO)thin-film transistors (TFTs)contact resistancesource/drain electrodesbias stress stability |
| spellingShingle | Qi Li Dedong Han Junchen Dong Dengqin Xu Yue Li Yi Wang Xing Zhang Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors Micromachines InSnO (ITO) thin-film transistors (TFTs) contact resistance source/drain electrodes bias stress stability |
| title | Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors |
| title_full | Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors |
| title_fullStr | Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors |
| title_full_unstemmed | Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors |
| title_short | Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors |
| title_sort | effects of source drain electrodes on the performance of insno thin film transistors |
| topic | InSnO (ITO) thin-film transistors (TFTs) contact resistance source/drain electrodes bias stress stability |
| url | https://www.mdpi.com/2072-666X/13/11/1896 |
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