Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel
When Raman microscopy is adopted to detect the chemical and biological processes in the silicon microfluidic channel, the laser-induced heating effect will cause a temperature rise in the sample liquid. This undesired temperature rise will mislead the Raman measurement during the temperature-influen...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-06-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/6/7/813 |
| _version_ | 1828768159242387456 |
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| author | Ying Lin Xinhai Yu Zhenyu Wang Shan-Tung Tu Zhengdong Wang |
| author_facet | Ying Lin Xinhai Yu Zhenyu Wang Shan-Tung Tu Zhengdong Wang |
| author_sort | Ying Lin |
| collection | DOAJ |
| description | When Raman microscopy is adopted to detect the chemical and biological processes in the silicon microfluidic channel, the laser-induced heating effect will cause a temperature rise in the sample liquid. This undesired temperature rise will mislead the Raman measurement during the temperature-influencing processes. In this paper, computational fluid dynamics simulations were conducted to evaluate the maximum local temperature-rise (MLT). Through the orthogonal analysis, the sensitivity of potential influencing parameters to the MLT was determined. In addition, it was found from transient simulations that it is reasonable to assume the actual measurement to be steady-state. Simulation results were qualitatively validated by experimental data from the Raman measurement of diffusion, a temperature-dependent process. A correlation was proposed for the first time to estimate the MLT. Simple in form and convenient for calculation, this correlation can be efficiently applied to Raman measurement in a silicon microfluidic channel. |
| first_indexed | 2024-12-11T07:41:52Z |
| format | Article |
| id | doaj.art-63c148be6a2e400bb7a9b50421e8d849 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-11T07:41:52Z |
| publishDate | 2015-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-63c148be6a2e400bb7a9b50421e8d8492022-12-22T01:15:33ZengMDPI AGMicromachines2072-666X2015-06-016781383010.3390/mi6070813mi6070813Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic ChannelYing Lin0Xinhai Yu1Zhenyu Wang2Shan-Tung Tu3Zhengdong Wang4School of Mechanical Engineering, Shanghai Institute of Technology, Shanghai 201418, ChinaKey Laboratory of Pressurized Systems and Safety, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, ChinaSchool of Software and Microelectronics at Wuxi, Peking University, Wuxi 214125, ChinaKey Laboratory of Pressurized Systems and Safety, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, ChinaKey Laboratory of Pressurized Systems and Safety, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, ChinaWhen Raman microscopy is adopted to detect the chemical and biological processes in the silicon microfluidic channel, the laser-induced heating effect will cause a temperature rise in the sample liquid. This undesired temperature rise will mislead the Raman measurement during the temperature-influencing processes. In this paper, computational fluid dynamics simulations were conducted to evaluate the maximum local temperature-rise (MLT). Through the orthogonal analysis, the sensitivity of potential influencing parameters to the MLT was determined. In addition, it was found from transient simulations that it is reasonable to assume the actual measurement to be steady-state. Simulation results were qualitatively validated by experimental data from the Raman measurement of diffusion, a temperature-dependent process. A correlation was proposed for the first time to estimate the MLT. Simple in form and convenient for calculation, this correlation can be efficiently applied to Raman measurement in a silicon microfluidic channel.http://www.mdpi.com/2072-666X/6/7/813laser-induced heatingRaman measurementmicrochannelcomputational fluid dynamics |
| spellingShingle | Ying Lin Xinhai Yu Zhenyu Wang Shan-Tung Tu Zhengdong Wang Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel Micromachines laser-induced heating Raman measurement microchannel computational fluid dynamics |
| title | Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel |
| title_full | Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel |
| title_fullStr | Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel |
| title_full_unstemmed | Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel |
| title_short | Effect of Laser-Induced Heating on Raman Measurement within a Silicon Microfluidic Channel |
| title_sort | effect of laser induced heating on raman measurement within a silicon microfluidic channel |
| topic | laser-induced heating Raman measurement microchannel computational fluid dynamics |
| url | http://www.mdpi.com/2072-666X/6/7/813 |
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