Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2016-01-01
|
| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/1589 |
| Summary: | Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to thin the top of AlGaN layer prior to deposition of Ti/Al/Mo/Au ohmic contacts. The surface morphology of AlGaN was investigated using scanning electron microscopy and atomic force microscopy. TLM measurements revealed a consequential decrease of contact resistivity. |
|---|---|
| ISSN: | 1336-1376 1804-3119 |