Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2016-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/1589 |
| _version_ | 1797827034411433984 |
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| author | Jacek Gryglewicz Wojciech Macherzynski Andrzej Stafiniak Bogdan Paszkiewicz Regina Paszkiewicz |
| author_facet | Jacek Gryglewicz Wojciech Macherzynski Andrzej Stafiniak Bogdan Paszkiewicz Regina Paszkiewicz |
| author_sort | Jacek Gryglewicz |
| collection | DOAJ |
| description | Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to thin the top of AlGaN layer prior to deposition of Ti/Al/Mo/Au ohmic contacts. The surface morphology of AlGaN was investigated using scanning electron microscopy and atomic force microscopy. TLM measurements revealed a consequential decrease of contact resistivity. |
| first_indexed | 2024-04-09T12:41:51Z |
| format | Article |
| id | doaj.art-644cd9d1af0a4589b624265414ac7140 |
| institution | Directory Open Access Journal |
| issn | 1336-1376 1804-3119 |
| language | English |
| last_indexed | 2024-04-09T12:41:51Z |
| publishDate | 2016-01-01 |
| publisher | VSB-Technical University of Ostrava |
| record_format | Article |
| series | Advances in Electrical and Electronic Engineering |
| spelling | doaj.art-644cd9d1af0a4589b624265414ac71402023-05-14T20:50:10ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192016-01-0114221822210.15598/aeee.v14i2.1589814Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic ContactsJacek Gryglewicz0Wojciech Macherzynski1Andrzej Stafiniak2Bogdan Paszkiewicz3Regina Paszkiewicz4Faculty of Microsystem Electronics and Photonics, Wroclaw University of TechnologyFaculty of Microsystem Electronics and Photonics, Wroclaw University of TechnologyFaculty of Microsystem Electronics and Photonics, Wroclaw University of TechnologyFaculty of Microsystem Electronics and Photonics, Wroclaw University of TechnologyFaculty of Microsystem Electronics and Photonics, Wroclaw University of TechnologySignificant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to thin the top of AlGaN layer prior to deposition of Ti/Al/Mo/Au ohmic contacts. The surface morphology of AlGaN was investigated using scanning electron microscopy and atomic force microscopy. TLM measurements revealed a consequential decrease of contact resistivity.http://advances.utc.sk/index.php/AEEE/article/view/1589alganganohmic metallizationrecessti/al/mo/au. |
| spellingShingle | Jacek Gryglewicz Wojciech Macherzynski Andrzej Stafiniak Bogdan Paszkiewicz Regina Paszkiewicz Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts Advances in Electrical and Electronic Engineering algan gan ohmic metallization recess ti/al/mo/au. |
| title | Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts |
| title_full | Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts |
| title_fullStr | Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts |
| title_full_unstemmed | Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts |
| title_short | Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts |
| title_sort | application of cl2 bcl3 ar plasma treatment in the improvement of ti al mo au ohmic contacts |
| topic | algan gan ohmic metallization recess ti/al/mo/au. |
| url | http://advances.utc.sk/index.php/AEEE/article/view/1589 |
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