Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer
Abstract The time‐consuming and laborious heat treatment is indispensable for preparing seed layer in solvothermal synthesis of WO3 film. Herein, WO3 film is prepared composed of single crystal WO3 nanowires on indium tin oxide (ITO) glass assisted with simple and energy‐saving electrodeposited seed...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-04-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202101355 |
| _version_ | 1797690200653037568 |
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| author | Chenjing Gao Xingwu Guo Lewen Nie Xuan Wu Liming Peng Juan Chen Wenjiang Ding |
| author_facet | Chenjing Gao Xingwu Guo Lewen Nie Xuan Wu Liming Peng Juan Chen Wenjiang Ding |
| author_sort | Chenjing Gao |
| collection | DOAJ |
| description | Abstract The time‐consuming and laborious heat treatment is indispensable for preparing seed layer in solvothermal synthesis of WO3 film. Herein, WO3 film is prepared composed of single crystal WO3 nanowires on indium tin oxide (ITO) glass assisted with simple and energy‐saving electrodeposited seed layer for the first time. The catalyst Pt is sputtered on it for 30 s after WO3 film is synthesized to form the hydrogen gasochromic film. The film structure is redesigned to improve its hydrogen gasochromic properties further. Before WO3 film is solvothermally synthesized, Pt is sputtered on seed layer for 15 s, then it is sputtered for 15 s again after WO3 film is prepared. The Pt sputtered on seed layer greatly changes the morphology of nanowires, making them sparse, slender, and cross‐linked like a bird's nest. Moderate 37% HCl is added during the solvothermal process to promote the growth of WO3 nanowires. The variation of transmittance (wavelength: 1000 nm), coloring rate (4% H2/Ar) and bleaching rate (air) of WO3 hydrogen gasochromic film with new structure at room temperature are 69.1%, 3.1%/s (increases 19.6%) and 0.85%/s (increases 193%), respectively. This study offers a new strategy for seed layer technology of WO3 film and structural design of WO3 hydrogen gasochromic film. |
| first_indexed | 2024-03-12T01:57:11Z |
| format | Article |
| id | doaj.art-645103b6a7a6447199a1d4e870da0db5 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T01:57:11Z |
| publishDate | 2022-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-645103b6a7a6447199a1d4e870da0db52023-09-08T03:32:46ZengWiley-VCHAdvanced Materials Interfaces2196-73502022-04-01910n/an/a10.1002/admi.202101355Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed LayerChenjing Gao0Xingwu Guo1Lewen Nie2Xuan Wu3Liming Peng4Juan Chen5Wenjiang Ding6National Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaNational Engineering Research Center of Light Alloys Net Forming School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaAbstract The time‐consuming and laborious heat treatment is indispensable for preparing seed layer in solvothermal synthesis of WO3 film. Herein, WO3 film is prepared composed of single crystal WO3 nanowires on indium tin oxide (ITO) glass assisted with simple and energy‐saving electrodeposited seed layer for the first time. The catalyst Pt is sputtered on it for 30 s after WO3 film is synthesized to form the hydrogen gasochromic film. The film structure is redesigned to improve its hydrogen gasochromic properties further. Before WO3 film is solvothermally synthesized, Pt is sputtered on seed layer for 15 s, then it is sputtered for 15 s again after WO3 film is prepared. The Pt sputtered on seed layer greatly changes the morphology of nanowires, making them sparse, slender, and cross‐linked like a bird's nest. Moderate 37% HCl is added during the solvothermal process to promote the growth of WO3 nanowires. The variation of transmittance (wavelength: 1000 nm), coloring rate (4% H2/Ar) and bleaching rate (air) of WO3 hydrogen gasochromic film with new structure at room temperature are 69.1%, 3.1%/s (increases 19.6%) and 0.85%/s (increases 193%), respectively. This study offers a new strategy for seed layer technology of WO3 film and structural design of WO3 hydrogen gasochromic film.https://doi.org/10.1002/admi.202101355electrodepositionfilm structure designhydrogen gasochromicsolvothermal methodWO 3 film |
| spellingShingle | Chenjing Gao Xingwu Guo Lewen Nie Xuan Wu Liming Peng Juan Chen Wenjiang Ding Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer Advanced Materials Interfaces electrodeposition film structure design hydrogen gasochromic solvothermal method WO 3 film |
| title | Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer |
| title_full | Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer |
| title_fullStr | Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer |
| title_full_unstemmed | Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer |
| title_short | Structure Design and Performance Research of WO3 Hydrogen Gasochromic Film Prepared by Solvothermal Synthesis Assisted with Electrodeposition of Seed Layer |
| title_sort | structure design and performance research of wo3 hydrogen gasochromic film prepared by solvothermal synthesis assisted with electrodeposition of seed layer |
| topic | electrodeposition film structure design hydrogen gasochromic solvothermal method WO 3 film |
| url | https://doi.org/10.1002/admi.202101355 |
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