Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism
Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It wa...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5139936 |
| _version_ | 1818096362255810560 |
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| author | Vyacheslav Timofeev Vladimir Mashanov Alexander Nikiforov Ilya Skvortsov Tatyana Gavrilova Dmitry Gulyaev Anton Gutakovskii Igor Chetyrin |
| author_facet | Vyacheslav Timofeev Vladimir Mashanov Alexander Nikiforov Ilya Skvortsov Tatyana Gavrilova Dmitry Gulyaev Anton Gutakovskii Igor Chetyrin |
| author_sort | Vyacheslav Timofeev |
| collection | DOAJ |
| description | Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm. |
| first_indexed | 2024-12-10T23:03:25Z |
| format | Article |
| id | doaj.art-6463dcc497a844de888e4c1a0ef99ce7 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T23:03:25Z |
| publishDate | 2020-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6463dcc497a844de888e4c1a0ef99ce72022-12-22T01:30:06ZengAIP Publishing LLCAIP Advances2158-32262020-01-01101015309015309-710.1063/1.5139936Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanismVyacheslav Timofeev0Vladimir Mashanov1Alexander Nikiforov2Ilya Skvortsov3Tatyana Gavrilova4Dmitry Gulyaev5Anton Gutakovskii6Igor Chetyrin7Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, RussiaBoreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, RussiaStructures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm.http://dx.doi.org/10.1063/1.5139936 |
| spellingShingle | Vyacheslav Timofeev Vladimir Mashanov Alexander Nikiforov Ilya Skvortsov Tatyana Gavrilova Dmitry Gulyaev Anton Gutakovskii Igor Chetyrin Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism AIP Advances |
| title | Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism |
| title_full | Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism |
| title_fullStr | Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism |
| title_full_unstemmed | Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism |
| title_short | Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism |
| title_sort | effect of sn for the dislocation free sisn nanostructure formation on the vapor liquid crystal mechanism |
| url | http://dx.doi.org/10.1063/1.5139936 |
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