Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications
Quantized conduction achieved in layered materials offers a wide range of applications in electronics. A comprehensive analysis of electronic properties of Sr<sub>2</sub>ZrO<sub>4</sub>/TiN- and Sr<sub>2</sub>ZrO<sub>4</sub>/TaN-layered heterostructure...
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| Format: | Article |
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MDPI AG
2022-12-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/15/24/9410 |
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| author | Umbreen Rasheed Muhammad Imran Abdul Shakoor Niaz Ahmad Niaz Fayyaz Hussain Rana Muhammad Arif Khalil Mohammad Alkhedher Sayed M. Eldin |
| author_facet | Umbreen Rasheed Muhammad Imran Abdul Shakoor Niaz Ahmad Niaz Fayyaz Hussain Rana Muhammad Arif Khalil Mohammad Alkhedher Sayed M. Eldin |
| author_sort | Umbreen Rasheed |
| collection | DOAJ |
| description | Quantized conduction achieved in layered materials offers a wide range of applications in electronics. A comprehensive analysis of electronic properties of Sr<sub>2</sub>ZrO<sub>4</sub>/TiN- and Sr<sub>2</sub>ZrO<sub>4</sub>/TaN-layered heterostructure is carried out using plane wave-based first principles calculations. To understand the origin of quantized conduction, the role of oxygen vacancies (V<sub>o</sub>s) in 2D layered Ruddleson–Popper perovskite (Sr<sub>2</sub>ZrO<sub>4</sub>) is analyzed using density of states, isosurface, and integrated charge density plots. The origin of quantized states formed near the Fermi level is proposed in terms of charge conduction layer formed at the interface. The comprehensive insight of Sr<sub>2</sub>ZrO<sub>4</sub>/TiN and Sr<sub>2</sub>ZrO4/TaN heterostructure interface is provided by shedding light on the charge redistribution from charge density and Bader charge analysis. Meanwhile, work function is calculated for the confirmation of charge conducting behavior of the two layered heterostructures. The interface of these two layered heterostructures revealed the quantized conduction phenomena which cannot be achieved with either layer alone. Stable switching achieved withaTaN electrode being an important task for robust RS and solving sneak path related problem is opening roadmap for 2D layered RRAM devices. |
| first_indexed | 2024-03-09T16:54:44Z |
| format | Article |
| id | doaj.art-647fd067c91547ffac1fb41b96f65280 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-09T16:54:44Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-647fd067c91547ffac1fb41b96f652802023-11-24T14:36:24ZengMDPI AGEnergies1996-10732022-12-011524941010.3390/en15249410Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM ApplicationsUmbreen Rasheed0Muhammad Imran1Abdul Shakoor2Niaz Ahmad Niaz3Fayyaz Hussain4Rana Muhammad Arif Khalil5Mohammad Alkhedher6Sayed M. Eldin7Materials Simulation Research Laboratory (MSRL), Institute of Physics, BahauddinZakariya University, Multan 60800, PakistanDepartment of Physics, Government College University Faisalabad, Faisalabad 38000, PakistanMaterials Simulation Research Laboratory (MSRL), Institute of Physics, BahauddinZakariya University, Multan 60800, PakistanMaterials Simulation Research Laboratory (MSRL), Institute of Physics, BahauddinZakariya University, Multan 60800, PakistanMaterials Simulation Research Laboratory (MSRL), Institute of Physics, BahauddinZakariya University, Multan 60800, PakistanMaterials Simulation Research Laboratory (MSRL), Institute of Physics, BahauddinZakariya University, Multan 60800, PakistanMechanical and Industrial Engineering Department, Abu Dhabi University, Abu Dhabi 111188, United Arab EmiratesCenter of Research, Faculty of Engineering & Technology, Future University in Egypt, New Cairo 11835, EgyptQuantized conduction achieved in layered materials offers a wide range of applications in electronics. A comprehensive analysis of electronic properties of Sr<sub>2</sub>ZrO<sub>4</sub>/TiN- and Sr<sub>2</sub>ZrO<sub>4</sub>/TaN-layered heterostructure is carried out using plane wave-based first principles calculations. To understand the origin of quantized conduction, the role of oxygen vacancies (V<sub>o</sub>s) in 2D layered Ruddleson–Popper perovskite (Sr<sub>2</sub>ZrO<sub>4</sub>) is analyzed using density of states, isosurface, and integrated charge density plots. The origin of quantized states formed near the Fermi level is proposed in terms of charge conduction layer formed at the interface. The comprehensive insight of Sr<sub>2</sub>ZrO<sub>4</sub>/TiN and Sr<sub>2</sub>ZrO4/TaN heterostructure interface is provided by shedding light on the charge redistribution from charge density and Bader charge analysis. Meanwhile, work function is calculated for the confirmation of charge conducting behavior of the two layered heterostructures. The interface of these two layered heterostructures revealed the quantized conduction phenomena which cannot be achieved with either layer alone. Stable switching achieved withaTaN electrode being an important task for robust RS and solving sneak path related problem is opening roadmap for 2D layered RRAM devices.https://www.mdpi.com/1996-1073/15/24/9410perovskiteDOSheterostructurelayered material |
| spellingShingle | Umbreen Rasheed Muhammad Imran Abdul Shakoor Niaz Ahmad Niaz Fayyaz Hussain Rana Muhammad Arif Khalil Mohammad Alkhedher Sayed M. Eldin Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications Energies perovskite DOS heterostructure layered material |
| title | Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications |
| title_full | Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications |
| title_fullStr | Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications |
| title_full_unstemmed | Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications |
| title_short | Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications |
| title_sort | theoretical investigation of origin of quantized conduction in 2d layered ruddleson popper perovskite heterostructure for the rram applications |
| topic | perovskite DOS heterostructure layered material |
| url | https://www.mdpi.com/1996-1073/15/24/9410 |
| work_keys_str_mv | AT umbreenrasheed theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT muhammadimran theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT abdulshakoor theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT niazahmadniaz theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT fayyazhussain theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT ranamuhammadarifkhalil theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT mohammadalkhedher theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications AT sayedmeldin theoreticalinvestigationoforiginofquantizedconductionin2dlayeredruddlesonpopperperovskiteheterostructurefortherramapplications |