Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface pa...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2020-06-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217920300332 |
| _version_ | 1818042914830286848 |
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| author | P. Murugapandiyan A. Mohanbabu V. Rajya Lakshmi V.N. Ramakrishnan Arathy Varghese MOHD Wasim S. Baskaran R. Saravana Kumar V. Janakiraman |
| author_facet | P. Murugapandiyan A. Mohanbabu V. Rajya Lakshmi V.N. Ramakrishnan Arathy Varghese MOHD Wasim S. Baskaran R. Saravana Kumar V. Janakiraman |
| author_sort | P. Murugapandiyan |
| collection | DOAJ |
| description | We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface passivation layer and an AlN buffer layer in the MOS-HEMT structure as a performance booster has been analyzed for the HEMT device with 30 nm gate length using Silvaco ATLAS TCAD. The proposed MOS-HEMT exhibits an outstanding performance, with an enhanced power gain cut-off frequency (fmax) of 366 GHz, a current gain cut-off frequency (ft) of 426 GHz, and a off-state breakdown voltage (Vbr) of 81 V. The high-k (high permittivity) HfO2 based metal oxide semiconductor HEMT device experiences a low off-state gate leakage current (Ig ~ 10−11A/mm) and a high Ion/Ioff ratio of 109. The InAlN/GaN/AlN heterostructures demonstrate improved two-dimensional electron gas (2DEG ~ 5.3 × 1013 cm−2), carrier mobility (μ) of 1256 Cm2/V-s and drain current density of (Ids) 2.7 A/mm. A large signal analysis performed at 30 GHz yielded a maximum of 28% power-added efficiency. The high JFoM of 34.506 THz V (Johnson Figure of Merit = ft × Vbr) and (ft.fmax)1/2 of 394.86 GHz indicate the potential applicability of the HfO2/InAlN/GaN MOS-HEMTs in high-frequency and high-power applications. |
| first_indexed | 2024-12-10T08:53:53Z |
| format | Article |
| id | doaj.art-648b32a89dfd4688b08028db9d687aa6 |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-12-10T08:53:53Z |
| publishDate | 2020-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-648b32a89dfd4688b08028db9d687aa62022-12-22T01:55:30ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792020-06-0152192198Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applicationsP. Murugapandiyan0A. Mohanbabu1V. Rajya Lakshmi2V.N. Ramakrishnan3Arathy Varghese4MOHD Wasim5S. Baskaran6R. Saravana Kumar7V. Janakiraman8Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India; Corresponding author.Department of Electronics and Communication Engineering, Karpagam College of Engineering, Coimbatore, IndiaDepartment of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, IndiaDepartment of Micro & Nanoelectronics, School of Electronics Engineering, VIT, Vellore, IndiaDepartment of Department of Electrical Engineering, Indian Institute of Technology, Bombay, IndiaDepartment of Electronics and Communication Engineering, Lovely Professional University, Jalandar, IndiaDepartment of Electronics and Communication Engineering, SKP Engineering College, Thiruvannamalai, IndiaDepartment of Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, IndiaDepartment of Electronics and Communication Engineering, Dhanalakshmi Srinivasan College of Engineering and Technology, Mamallapuram, IndiaWe present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface passivation layer and an AlN buffer layer in the MOS-HEMT structure as a performance booster has been analyzed for the HEMT device with 30 nm gate length using Silvaco ATLAS TCAD. The proposed MOS-HEMT exhibits an outstanding performance, with an enhanced power gain cut-off frequency (fmax) of 366 GHz, a current gain cut-off frequency (ft) of 426 GHz, and a off-state breakdown voltage (Vbr) of 81 V. The high-k (high permittivity) HfO2 based metal oxide semiconductor HEMT device experiences a low off-state gate leakage current (Ig ~ 10−11A/mm) and a high Ion/Ioff ratio of 109. The InAlN/GaN/AlN heterostructures demonstrate improved two-dimensional electron gas (2DEG ~ 5.3 × 1013 cm−2), carrier mobility (μ) of 1256 Cm2/V-s and drain current density of (Ids) 2.7 A/mm. A large signal analysis performed at 30 GHz yielded a maximum of 28% power-added efficiency. The high JFoM of 34.506 THz V (Johnson Figure of Merit = ft × Vbr) and (ft.fmax)1/2 of 394.86 GHz indicate the potential applicability of the HfO2/InAlN/GaN MOS-HEMTs in high-frequency and high-power applications.http://www.sciencedirect.com/science/article/pii/S2468217920300332MOS-HEMTHfO2JFoMMicrowave applicationsCut-off frequencyLeakage current |
| spellingShingle | P. Murugapandiyan A. Mohanbabu V. Rajya Lakshmi V.N. Ramakrishnan Arathy Varghese MOHD Wasim S. Baskaran R. Saravana Kumar V. Janakiraman Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications Journal of Science: Advanced Materials and Devices MOS-HEMT HfO2 JFoM Microwave applications Cut-off frequency Leakage current |
| title | Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications |
| title_full | Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications |
| title_fullStr | Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications |
| title_full_unstemmed | Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications |
| title_short | Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications |
| title_sort | performance analysis of hfo2 inaln aln gan hemt with aln buffer layer for high power microwave applications |
| topic | MOS-HEMT HfO2 JFoM Microwave applications Cut-off frequency Leakage current |
| url | http://www.sciencedirect.com/science/article/pii/S2468217920300332 |
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