Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators
The studies of the laser operated third order nonlinear optical features of novel TlGaSn2Se6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG p...
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MDPI AG
2017-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/7/11/341 |
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| author | Oleh V. Parasyuk Volodymyr S. Babizhetskyy Oleg Y. Khyzhun Volodymyr O. Levytskyy Iwan V. Kityk Galyna L. Myronchuk Oksana V. Tsisar Lyudmyla V. Piskach Jaroslaw Jedryka Artur Maciag Michal Piasecki |
| author_facet | Oleh V. Parasyuk Volodymyr S. Babizhetskyy Oleg Y. Khyzhun Volodymyr O. Levytskyy Iwan V. Kityk Galyna L. Myronchuk Oksana V. Tsisar Lyudmyla V. Piskach Jaroslaw Jedryka Artur Maciag Michal Piasecki |
| author_sort | Oleh V. Parasyuk |
| collection | DOAJ |
| description | The studies of the laser operated third order nonlinear optical features of novel TlGaSn2Se6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar+ ions on the XPS spectra of the TlInSn2Se6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn2Se6 We have established that for the TlGaSn2Se6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn2Se6 crystal in advanced optoelectronic laser operated devices. |
| first_indexed | 2024-04-12T19:34:11Z |
| format | Article |
| id | doaj.art-648d5e3ea1c6482491977ff5f878a9c3 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-12T19:34:11Z |
| publishDate | 2017-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-648d5e3ea1c6482491977ff5f878a9c32022-12-22T03:19:15ZengMDPI AGCrystals2073-43522017-11-0171134110.3390/cryst7110341cryst7110341Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical ModulatorsOleh V. Parasyuk0Volodymyr S. Babizhetskyy1Oleg Y. Khyzhun2Volodymyr O. Levytskyy3Iwan V. Kityk4Galyna L. Myronchuk5Oksana V. Tsisar6Lyudmyla V. Piskach7Jaroslaw Jedryka8Artur Maciag9Michal Piasecki10Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, UkraineDepartment of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya St. 6, 79005 Lviv, UkraineFrantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krzhyzhanivsky St. 3, 03142 Kyiv, UkraineDepartment of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya St. 6, 79005 Lviv, UkraineInstitute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, PL-42-201 Czestochowa, PolandPhysics Department, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, UkraineDepartment of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, UkraineDepartment of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, UkraineInstitute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, PL-42-201 Czestochowa, PolandInstitute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, PL-42-201 Czestochowa, PolandInstitute of Physics, J. Dlugosz University, Armii Krajowej 13/15, PL-42201 Częstochowa, PolandThe studies of the laser operated third order nonlinear optical features of novel TlGaSn2Se6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar+ ions on the XPS spectra of the TlInSn2Se6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn2Se6 We have established that for the TlGaSn2Se6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn2Se6 crystal in advanced optoelectronic laser operated devices.https://www.mdpi.com/2073-4352/7/11/341chalcogenidescrystal structureelectronic structureXPSnonlinear opticsphotoinduced effects |
| spellingShingle | Oleh V. Parasyuk Volodymyr S. Babizhetskyy Oleg Y. Khyzhun Volodymyr O. Levytskyy Iwan V. Kityk Galyna L. Myronchuk Oksana V. Tsisar Lyudmyla V. Piskach Jaroslaw Jedryka Artur Maciag Michal Piasecki Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators Crystals chalcogenides crystal structure electronic structure XPS nonlinear optics photoinduced effects |
| title | Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators |
| title_full | Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators |
| title_fullStr | Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators |
| title_full_unstemmed | Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators |
| title_short | Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators |
| title_sort | novel quaternary tlgasn2se6 single crystal as promising material for laser operated infrared nonlinear optical modulators |
| topic | chalcogenides crystal structure electronic structure XPS nonlinear optics photoinduced effects |
| url | https://www.mdpi.com/2073-4352/7/11/341 |
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