Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces

Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to f...

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Main Authors: J. Z. Sun, P. L. Trouilloud, G. P. Lauer, P. Hashemi
Format: Article
Language:English
Published: AIP Publishing LLC 2019-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5058265
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author J. Z. Sun
P. L. Trouilloud
G. P. Lauer
P. Hashemi
author_facet J. Z. Sun
P. L. Trouilloud
G. P. Lauer
P. Hashemi
author_sort J. Z. Sun
collection DOAJ
description Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.
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spelling doaj.art-64c2a5127d86494b8c7932b21529d23c2022-12-21T23:01:06ZengAIP Publishing LLCAIP Advances2158-32262019-01-0191015002015002-610.1063/1.5058265005901ADVBias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfacesJ. Z. Sun0P. L. Trouilloud1G. P. Lauer2P. Hashemi3IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USABarrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.http://dx.doi.org/10.1063/1.5058265
spellingShingle J. Z. Sun
P. L. Trouilloud
G. P. Lauer
P. Hashemi
Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
AIP Advances
title Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
title_full Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
title_fullStr Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
title_full_unstemmed Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
title_short Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
title_sort bias dependent conductance in cofeb mgo cofeb magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
url http://dx.doi.org/10.1063/1.5058265
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AT pltrouilloud biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces
AT gplauer biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces
AT phashemi biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces