Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to f...
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2019-01-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5058265 |
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author | J. Z. Sun P. L. Trouilloud G. P. Lauer P. Hashemi |
author_facet | J. Z. Sun P. L. Trouilloud G. P. Lauer P. Hashemi |
author_sort | J. Z. Sun |
collection | DOAJ |
description | Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization. |
first_indexed | 2024-12-14T12:33:59Z |
format | Article |
id | doaj.art-64c2a5127d86494b8c7932b21529d23c |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-14T12:33:59Z |
publishDate | 2019-01-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-64c2a5127d86494b8c7932b21529d23c2022-12-21T23:01:06ZengAIP Publishing LLCAIP Advances2158-32262019-01-0191015002015002-610.1063/1.5058265005901ADVBias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfacesJ. Z. Sun0P. L. Trouilloud1G. P. Lauer2P. Hashemi3IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USABarrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.http://dx.doi.org/10.1063/1.5058265 |
spellingShingle | J. Z. Sun P. L. Trouilloud G. P. Lauer P. Hashemi Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces AIP Advances |
title | Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
title_full | Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
title_fullStr | Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
title_full_unstemmed | Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
title_short | Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
title_sort | bias dependent conductance in cofeb mgo cofeb magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces |
url | http://dx.doi.org/10.1063/1.5058265 |
work_keys_str_mv | AT jzsun biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces AT pltrouilloud biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces AT gplauer biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces AT phashemi biasdependentconductanceincofebmgocofebmagnetictunneljunctionsasanindicatorforelectrodemagneticconditionatbarrierinterfaces |