Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization
Zeolitic imidazolate framework-8 (ZIF-8) is a versatile candidate for next-generation electronics owing to its adjustable lattice and physicochemical properties. However, the utilization of ZIF-8 for the fabrication of solid-state electronics and circuit components, such as field-effect transistors...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0180499 |
| _version_ | 1797331897570820096 |
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| author | Pengyan Luan Zhenxin Yang Zheng Liang Xiaoliang Li Nan Chen Fushun Li Xuanhe Li Jiale Su Zheng-Hong Lu Qiang Zhu |
| author_facet | Pengyan Luan Zhenxin Yang Zheng Liang Xiaoliang Li Nan Chen Fushun Li Xuanhe Li Jiale Su Zheng-Hong Lu Qiang Zhu |
| author_sort | Pengyan Luan |
| collection | DOAJ |
| description | Zeolitic imidazolate framework-8 (ZIF-8) is a versatile candidate for next-generation electronics owing to its adjustable lattice and physicochemical properties. However, the utilization of ZIF-8 for the fabrication of solid-state electronics and circuit components, such as field-effect transistors (FETs), has not been realized thus far, primarily due to ongoing debates surrounding its electrical properties. In this work, we fabricated n-type FETs using ZIF-8@ZnO nanorod arrays. A significant hysteresis behavior was observed. It was demonstrated that this hysteresis cannot be assigned to the well-established ferroelectric effect but rather to the polarization of ZIF-8, wherein the electric field of the gate aligns the dipole of 2-methylimidazole through molecular orientation rotation. It was clarified that the process of annealing in air can result in the chemisorption of oxygen on methylimidazole, leading to a limitation in the rotation of methylimidazole. This restriction ultimately causes the depolarization of ZIF-8, resulting in the erasure of hysteresis. This study unfolds the tunable hysteresis behavior of ZIF-8 and its sensibility to oxygen, thereby highlighting the potential applications of ZIF-8 in FETs, nonvolatile memories, and gas sensors. |
| first_indexed | 2024-03-08T07:41:56Z |
| format | Article |
| id | doaj.art-64c54a12e6ee4b3fbd7095e2d843110a |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-08T07:41:56Z |
| publishDate | 2024-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-64c54a12e6ee4b3fbd7095e2d843110a2024-02-02T16:57:37ZengAIP Publishing LLCAPL Materials2166-532X2024-01-01121011117011117-810.1063/5.0180499Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarizationPengyan Luan0Zhenxin Yang1Zheng Liang2Xiaoliang Li3Nan Chen4Fushun Li5Xuanhe Li6Jiale Su7Zheng-Hong Lu8Qiang Zhu9Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaKey Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, ChinaZeolitic imidazolate framework-8 (ZIF-8) is a versatile candidate for next-generation electronics owing to its adjustable lattice and physicochemical properties. However, the utilization of ZIF-8 for the fabrication of solid-state electronics and circuit components, such as field-effect transistors (FETs), has not been realized thus far, primarily due to ongoing debates surrounding its electrical properties. In this work, we fabricated n-type FETs using ZIF-8@ZnO nanorod arrays. A significant hysteresis behavior was observed. It was demonstrated that this hysteresis cannot be assigned to the well-established ferroelectric effect but rather to the polarization of ZIF-8, wherein the electric field of the gate aligns the dipole of 2-methylimidazole through molecular orientation rotation. It was clarified that the process of annealing in air can result in the chemisorption of oxygen on methylimidazole, leading to a limitation in the rotation of methylimidazole. This restriction ultimately causes the depolarization of ZIF-8, resulting in the erasure of hysteresis. This study unfolds the tunable hysteresis behavior of ZIF-8 and its sensibility to oxygen, thereby highlighting the potential applications of ZIF-8 in FETs, nonvolatile memories, and gas sensors.http://dx.doi.org/10.1063/5.0180499 |
| spellingShingle | Pengyan Luan Zhenxin Yang Zheng Liang Xiaoliang Li Nan Chen Fushun Li Xuanhe Li Jiale Su Zheng-Hong Lu Qiang Zhu Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization APL Materials |
| title | Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization |
| title_full | Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization |
| title_fullStr | Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization |
| title_full_unstemmed | Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization |
| title_short | Hysteresis erasure in ZIF-8@ZnO nanorod array field-effect transistors through oxygen chemisorption-induced depolarization |
| title_sort | hysteresis erasure in zif 8 zno nanorod array field effect transistors through oxygen chemisorption induced depolarization |
| url | http://dx.doi.org/10.1063/5.0180499 |
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