Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems

This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specif...

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Main Authors: Zaoxia Wen, Xingyu Liu, Wenxiu Chen, Ruolin Zhou, Hao Wu, Yongmei Xia, Lianbin Wu
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Polymers
Subjects:
Online Access:https://www.mdpi.com/2073-4360/16/6/846
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author Zaoxia Wen
Xingyu Liu
Wenxiu Chen
Ruolin Zhou
Hao Wu
Yongmei Xia
Lianbin Wu
author_facet Zaoxia Wen
Xingyu Liu
Wenxiu Chen
Ruolin Zhou
Hao Wu
Yongmei Xia
Lianbin Wu
author_sort Zaoxia Wen
collection DOAJ
description This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.
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spelling doaj.art-64c5df84439649d48f33b4937d70da872024-03-27T14:01:29ZengMDPI AGPolymers2073-43602024-03-0116684610.3390/polym16060846Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic SystemsZaoxia Wen0Xingyu Liu1Wenxiu Chen2Ruolin Zhou3Hao Wu4Yongmei Xia5Lianbin Wu6College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, ChinaThis paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.https://www.mdpi.com/2073-4360/16/6/846photoresist resinpolyhedral oligomeric silsesquioxane (POSS)POSS-based photoresistlithographic systems
spellingShingle Zaoxia Wen
Xingyu Liu
Wenxiu Chen
Ruolin Zhou
Hao Wu
Yongmei Xia
Lianbin Wu
Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
Polymers
photoresist resin
polyhedral oligomeric silsesquioxane (POSS)
POSS-based photoresist
lithographic systems
title Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
title_full Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
title_fullStr Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
title_full_unstemmed Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
title_short Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
title_sort progress in polyhedral oligomeric silsesquioxane poss photoresists a comprehensive review across lithographic systems
topic photoresist resin
polyhedral oligomeric silsesquioxane (POSS)
POSS-based photoresist
lithographic systems
url https://www.mdpi.com/2073-4360/16/6/846
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