Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass
Abstract Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possibl...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-05012-w |
| _version_ | 1818681336523653120 |
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| author | Hal Emmer Christopher T. Chen Rebecca Saive Dennis Friedrich Yu Horie Amir Arbabi Andrei Faraon Harry A. Atwater |
| author_facet | Hal Emmer Christopher T. Chen Rebecca Saive Dennis Friedrich Yu Horie Amir Arbabi Andrei Faraon Harry A. Atwater |
| author_sort | Hal Emmer |
| collection | DOAJ |
| description | Abstract Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm−3 that exhibited mobilities as high as 16 cm2V−1s−1. Due to their unique optical properties, these films hold much promise for use in advanced optical devices. |
| first_indexed | 2024-12-17T10:01:20Z |
| format | Article |
| id | doaj.art-64c60fec7ec140219b762c130adc8818 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-17T10:01:20Z |
| publishDate | 2017-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-64c60fec7ec140219b762c130adc88182022-12-21T21:53:17ZengNature PortfolioScientific Reports2045-23222017-07-01711610.1038/s41598-017-05012-wFabrication of Single Crystal Gallium Phosphide Thin Films on GlassHal Emmer0Christopher T. Chen1Rebecca Saive2Dennis Friedrich3Yu Horie4Amir Arbabi5Andrei Faraon6Harry A. Atwater7Applied Physics and Materials Science, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyJoint Center for Artificial Photosynthesis, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyApplied Physics and Materials Science, California Institute of TechnologyAbstract Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm−3 that exhibited mobilities as high as 16 cm2V−1s−1. Due to their unique optical properties, these films hold much promise for use in advanced optical devices.https://doi.org/10.1038/s41598-017-05012-w |
| spellingShingle | Hal Emmer Christopher T. Chen Rebecca Saive Dennis Friedrich Yu Horie Amir Arbabi Andrei Faraon Harry A. Atwater Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass Scientific Reports |
| title | Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass |
| title_full | Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass |
| title_fullStr | Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass |
| title_full_unstemmed | Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass |
| title_short | Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass |
| title_sort | fabrication of single crystal gallium phosphide thin films on glass |
| url | https://doi.org/10.1038/s41598-017-05012-w |
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