Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation
With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by sp...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847823001119 |
| _version_ | 1797292962754854912 |
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| author | Binhao Wang Haidong Zhao Jianghua Li Bin Zhang Dan Wang Chen Chen Aihua Song Wentao Hu Dongli Yu Bo Xu Yongjun Tian |
| author_facet | Binhao Wang Haidong Zhao Jianghua Li Bin Zhang Dan Wang Chen Chen Aihua Song Wentao Hu Dongli Yu Bo Xu Yongjun Tian |
| author_sort | Binhao Wang |
| collection | DOAJ |
| description | With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4 000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification. |
| first_indexed | 2024-03-07T20:05:03Z |
| format | Article |
| id | doaj.art-64d611a160eb400b8d8ef29717377066 |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-07T20:05:03Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-64d611a160eb400b8d8ef297173770662024-02-28T05:13:34ZengElsevierJournal of Materiomics2352-84782024-03-01102285292Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitationBinhao Wang0Haidong Zhao1Jianghua Li2Bin Zhang3Dan Wang4Chen Chen5Aihua Song6Wentao Hu7Dongli Yu8Bo Xu9Yongjun Tian10Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaShaanxi University of Technology, Hanzhong, Shaanxi, 723000, China; Corresponding author.Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, China; Corresponding author.Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei, 066004, ChinaWith the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4 000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification.http://www.sciencedirect.com/science/article/pii/S2352847823001119Magnesium silicideHigh pressure synthesisAlloy scatteringBand convergence |
| spellingShingle | Binhao Wang Haidong Zhao Jianghua Li Bin Zhang Dan Wang Chen Chen Aihua Song Wentao Hu Dongli Yu Bo Xu Yongjun Tian Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation Journal of Materiomics Magnesium silicide High pressure synthesis Alloy scattering Band convergence |
| title | Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation |
| title_full | Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation |
| title_fullStr | Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation |
| title_full_unstemmed | Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation |
| title_short | Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation |
| title_sort | enhanced thermoelectric performance of sb doped mg2si0 4sn0 6 via doping alloying and nanoprecipitation |
| topic | Magnesium silicide High pressure synthesis Alloy scattering Band convergence |
| url | http://www.sciencedirect.com/science/article/pii/S2352847823001119 |
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