Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis
Lapping is one of the standard essential methods to realise the global planarization of SiC and other semiconductor substrates. It is necessary to deeply study the mechanism to obtain SiC lapping process parameters with a strong comprehensive lapping performance (i.e., high material removal rate (MR...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/8/910 |
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| author | Jiayun Deng Qiusheng Yan Jiabin Lu Qiang Xiong Jisheng Pan |
| author_facet | Jiayun Deng Qiusheng Yan Jiabin Lu Qiang Xiong Jisheng Pan |
| author_sort | Jiayun Deng |
| collection | DOAJ |
| description | Lapping is one of the standard essential methods to realise the global planarization of SiC and other semiconductor substrates. It is necessary to deeply study the mechanism to obtain SiC lapping process parameters with a strong comprehensive lapping performance (i.e., high material removal rate (MRR<sub>m</sub>), small surface roughness (Ra), and low total thickness variation (TTV)). The effects of the lapping process parameters and their interactions on lapping performance for SiC were investigated using orthogonal experiments; the effects on the MRR<sub>m</sub>, Ra, TTV, and optimal parameters under the conditions of a single evaluation index were investigated using intuitive analysis (range analysis, variance analysis, and effect curve analysis). The entropy value method and grey relational analysis were used to transform the multi-evaluation-index optimisation into a single-index optimisation about the grey relational grade (GRG) and to comprehensively evaluate the lapping performance of each process parameter. The results showed that the lapping plate types, abrasive size, and their interaction effect had the most significant effects on MRR<sub>m</sub> and Ra, with a contribution of over 85%. The interaction between the lapping plate types and abrasive size was also found to have the most significant effect on TTV, with a contribution of up to 51.07%. As the lapping plate’s hardness and abrasive size increased, the MRR<sub>m</sub> and Ra also gradually increased. As the lapping normal-pressure increased, MRR<sub>m</sub> increased, Ra gradually decreased, and TTV first decreased and then increased. MRR<sub>m</sub>, Ra, and TTV first increased and then decreased with increasing abrasive concentration. Compared to the optimisation results obtained by intuitive analysis, the process parameter optimised by the grey relational analysis resulted in a smooth surface with an MRR<sub>m</sub> of 90.2 μm/h, an Ra of 0.769 nm, and a TTV of 3 μm, with a significant improvement in the comprehensive lapping performance. This study reveals that a combination of orthogonal experiments and grey relational analysis can provide new ideas for optimising the process parameters of SiC. |
| first_indexed | 2024-03-10T08:35:09Z |
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| id | doaj.art-64d6d2395d1b4e38b37a0a90c3d6bc4a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T08:35:09Z |
| publishDate | 2021-07-01 |
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| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-64d6d2395d1b4e38b37a0a90c3d6bc4a2023-11-22T08:43:54ZengMDPI AGMicromachines2072-666X2021-07-0112891010.3390/mi12080910Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational AnalysisJiayun Deng0Qiusheng Yan1Jiabin Lu2Qiang Xiong3Jisheng Pan4School of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaLapping is one of the standard essential methods to realise the global planarization of SiC and other semiconductor substrates. It is necessary to deeply study the mechanism to obtain SiC lapping process parameters with a strong comprehensive lapping performance (i.e., high material removal rate (MRR<sub>m</sub>), small surface roughness (Ra), and low total thickness variation (TTV)). The effects of the lapping process parameters and their interactions on lapping performance for SiC were investigated using orthogonal experiments; the effects on the MRR<sub>m</sub>, Ra, TTV, and optimal parameters under the conditions of a single evaluation index were investigated using intuitive analysis (range analysis, variance analysis, and effect curve analysis). The entropy value method and grey relational analysis were used to transform the multi-evaluation-index optimisation into a single-index optimisation about the grey relational grade (GRG) and to comprehensively evaluate the lapping performance of each process parameter. The results showed that the lapping plate types, abrasive size, and their interaction effect had the most significant effects on MRR<sub>m</sub> and Ra, with a contribution of over 85%. The interaction between the lapping plate types and abrasive size was also found to have the most significant effect on TTV, with a contribution of up to 51.07%. As the lapping plate’s hardness and abrasive size increased, the MRR<sub>m</sub> and Ra also gradually increased. As the lapping normal-pressure increased, MRR<sub>m</sub> increased, Ra gradually decreased, and TTV first decreased and then increased. MRR<sub>m</sub>, Ra, and TTV first increased and then decreased with increasing abrasive concentration. Compared to the optimisation results obtained by intuitive analysis, the process parameter optimised by the grey relational analysis resulted in a smooth surface with an MRR<sub>m</sub> of 90.2 μm/h, an Ra of 0.769 nm, and a TTV of 3 μm, with a significant improvement in the comprehensive lapping performance. This study reveals that a combination of orthogonal experiments and grey relational analysis can provide new ideas for optimising the process parameters of SiC.https://www.mdpi.com/2072-666X/12/8/910orthogonal experimentgrey relational analysislapping process parameter optimisationsingle-crystal 4H–SiC |
| spellingShingle | Jiayun Deng Qiusheng Yan Jiabin Lu Qiang Xiong Jisheng Pan Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis Micromachines orthogonal experiment grey relational analysis lapping process parameter optimisation single-crystal 4H–SiC |
| title | Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis |
| title_full | Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis |
| title_fullStr | Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis |
| title_full_unstemmed | Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis |
| title_short | Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis |
| title_sort | optimisation of lapping process parameters for single crystal 4h sic using orthogonal experiments and grey relational analysis |
| topic | orthogonal experiment grey relational analysis lapping process parameter optimisation single-crystal 4H–SiC |
| url | https://www.mdpi.com/2072-666X/12/8/910 |
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