Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
Abstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/In...
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Nature Portfolio
2017-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-03238-2 |
| _version_ | 1819042293033730048 |
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| author | Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi |
| author_facet | Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi |
| author_sort | Abbas Haddadi |
| collection | DOAJ |
| description | Abstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection. |
| first_indexed | 2024-12-21T09:38:35Z |
| format | Article |
| id | doaj.art-64ea48d125b54850aa2abd1ee5cf949f |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-21T09:38:35Z |
| publishDate | 2017-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-64ea48d125b54850aa2abd1ee5cf949f2022-12-21T19:08:32ZengNature PortfolioScientific Reports2045-23222017-06-01711710.1038/s41598-017-03238-2Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlatticesAbbas Haddadi0Arash Dehzangi1Romain Chevallier2Sourav Adhikary3Manijeh Razeghi4Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern UniversityCenter for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern UniversityCenter for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern UniversityCenter for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern UniversityCenter for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern UniversityAbstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection.https://doi.org/10.1038/s41598-017-03238-2 |
| spellingShingle | Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices Scientific Reports |
| title | Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices |
| title_full | Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices |
| title_fullStr | Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices |
| title_full_unstemmed | Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices |
| title_short | Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices |
| title_sort | bias selectable nbn dual band long very long wavelength infrared photodetectors based on inas inas1 xsbx alas1 xsbx type ii superlattices |
| url | https://doi.org/10.1038/s41598-017-03238-2 |
| work_keys_str_mv | AT abbashaddadi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT arashdehzangi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT romainchevallier biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT souravadhikary biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT manijehrazeghi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices |