A Comprehensive Comparison of EMI Immunity in CMOS Amplifier Topologies
This paper provides the results of a comprehensive comparison between complementary metal oxide semiconductor (CMOS) amplifiers with low susceptibility to electromagnetic interference (EMI). They represent the state-of-the-art in low EMI susceptibility design. An exhaustive scenario for EMI pollutio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/10/1181 |
| Summary: | This paper provides the results of a comprehensive comparison between complementary metal oxide semiconductor (CMOS) amplifiers with low susceptibility to electromagnetic interference (EMI). They represent the state-of-the-art in low EMI susceptibility design. An exhaustive scenario for EMI pollution has been considered: the injected interference can indeed directly reach the amplifier pins or can be coupled from the printed circuit board (PCB) ground. This is also a key point for evaluating the susceptibility from EMI coupled to the output pin. All of the amplifiers are re-designed in a United Microelectronics Corporation (UMC) 180 nm CMOS process in order to have a fair comparison. The topologies investigated and compared are basically derived from the Miller and the folded cascode ones, which are well-known and widely used by CMOS analog designers. |
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| ISSN: | 2079-9292 |