Effect of thickness and reaction media on properties of ZnO thin films by SILAR
Abstract Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for optical and gas sensing applications. The influence of thickness and solvent on various features of ZnO thin films deposited at ambient temperature and barometric pressure by the sequential i...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-01-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-04782-2 |
| _version_ | 1819260980659486720 |
|---|---|
| author | Gani Yergaliuly Baktiyar Soltabayev Sandugash Kalybekkyzy Zhumabay Bakenov Almagul Mentbayeva |
| author_facet | Gani Yergaliuly Baktiyar Soltabayev Sandugash Kalybekkyzy Zhumabay Bakenov Almagul Mentbayeva |
| author_sort | Gani Yergaliuly |
| collection | DOAJ |
| description | Abstract Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for optical and gas sensing applications. The influence of thickness and solvent on various features of ZnO thin films deposited at ambient temperature and barometric pressure by the sequential ionic layer adsorption and reaction method (SILAR) was carefully studied in this work. Ethanol and distilled water (DW) were alternatively used as a solvent for preparation of ZnO precursor solution. Superficial morphology, crystallite structure, optical and electrical characteristics of the thin films of various thickness are examined applying X-ray diffraction (XRD) system, scanning electron microscopy, the atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, photoluminescence spectroscopy, Hall effect measurement analysis and UV response study. XRD analysis confirmed that thin films fabricated using ethanol or DW precursor solvents are hexagonal wurtzite ZnO with a preferred growth orientation (002). Furthermore, it was found that thin films made using ethanol are as highly crystalline as thin films made using DW. ZnO thin films prepared using aqueous solutions possess high optical band gaps. However, films prepared with ethanol solvent have low resistivity (10–2 Ω cm) and high electron mobility (750 cm2/Vs). The ethanol solvent-based SILAR method opens opportunities to synthase high quality ZnO thin films for various potential applications. |
| first_indexed | 2024-12-23T19:34:32Z |
| format | Article |
| id | doaj.art-6547b31e7ef84eaa8c2e43d91a03f664 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-23T19:34:32Z |
| publishDate | 2022-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-6547b31e7ef84eaa8c2e43d91a03f6642022-12-21T17:33:50ZengNature PortfolioScientific Reports2045-23222022-01-0112111310.1038/s41598-022-04782-2Effect of thickness and reaction media on properties of ZnO thin films by SILARGani Yergaliuly0Baktiyar Soltabayev1Sandugash Kalybekkyzy2Zhumabay Bakenov3Almagul Mentbayeva4Department of Chemical and Material Engineering, School of Engineering and Digital Sciences, Nazarbayev UniversityDepartment of Chemical and Material Engineering, School of Engineering and Digital Sciences, Nazarbayev UniversityDepartment of Chemical and Material Engineering, School of Engineering and Digital Sciences, Nazarbayev UniversityDepartment of Chemical and Material Engineering, School of Engineering and Digital Sciences, Nazarbayev UniversityDepartment of Chemical and Material Engineering, School of Engineering and Digital Sciences, Nazarbayev UniversityAbstract Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for optical and gas sensing applications. The influence of thickness and solvent on various features of ZnO thin films deposited at ambient temperature and barometric pressure by the sequential ionic layer adsorption and reaction method (SILAR) was carefully studied in this work. Ethanol and distilled water (DW) were alternatively used as a solvent for preparation of ZnO precursor solution. Superficial morphology, crystallite structure, optical and electrical characteristics of the thin films of various thickness are examined applying X-ray diffraction (XRD) system, scanning electron microscopy, the atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, photoluminescence spectroscopy, Hall effect measurement analysis and UV response study. XRD analysis confirmed that thin films fabricated using ethanol or DW precursor solvents are hexagonal wurtzite ZnO with a preferred growth orientation (002). Furthermore, it was found that thin films made using ethanol are as highly crystalline as thin films made using DW. ZnO thin films prepared using aqueous solutions possess high optical band gaps. However, films prepared with ethanol solvent have low resistivity (10–2 Ω cm) and high electron mobility (750 cm2/Vs). The ethanol solvent-based SILAR method opens opportunities to synthase high quality ZnO thin films for various potential applications.https://doi.org/10.1038/s41598-022-04782-2 |
| spellingShingle | Gani Yergaliuly Baktiyar Soltabayev Sandugash Kalybekkyzy Zhumabay Bakenov Almagul Mentbayeva Effect of thickness and reaction media on properties of ZnO thin films by SILAR Scientific Reports |
| title | Effect of thickness and reaction media on properties of ZnO thin films by SILAR |
| title_full | Effect of thickness and reaction media on properties of ZnO thin films by SILAR |
| title_fullStr | Effect of thickness and reaction media on properties of ZnO thin films by SILAR |
| title_full_unstemmed | Effect of thickness and reaction media on properties of ZnO thin films by SILAR |
| title_short | Effect of thickness and reaction media on properties of ZnO thin films by SILAR |
| title_sort | effect of thickness and reaction media on properties of zno thin films by silar |
| url | https://doi.org/10.1038/s41598-022-04782-2 |
| work_keys_str_mv | AT ganiyergaliuly effectofthicknessandreactionmediaonpropertiesofznothinfilmsbysilar AT baktiyarsoltabayev effectofthicknessandreactionmediaonpropertiesofznothinfilmsbysilar AT sandugashkalybekkyzy effectofthicknessandreactionmediaonpropertiesofznothinfilmsbysilar AT zhumabaybakenov effectofthicknessandreactionmediaonpropertiesofznothinfilmsbysilar AT almagulmentbayeva effectofthicknessandreactionmediaonpropertiesofznothinfilmsbysilar |