System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer
This study primarily covers the design and development of an MEMS based accelerometer. Frequency, displacement sensitivity, and capacitance are the subject of analytical modelling; the corresponding values are found to be 7.41kHz, 4.5096∗10−9 m/g, and 0.289pF respectively. COMSOL Multiphysics is use...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Tamkang University Press
2024-01-01
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| Series: | Journal of Applied Science and Engineering |
| Subjects: | |
| Online Access: | http://jase.tku.edu.tw/articles/jase-202403-27-3-0012 |
| _version_ | 1827368694624288768 |
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| author | Veena.S H.L Suresh Newton Rai Veerapandi N Veda Sandeep Nagaraj |
| author_facet | Veena.S H.L Suresh Newton Rai Veerapandi N Veda Sandeep Nagaraj |
| author_sort | Veena.S |
| collection | DOAJ |
| description | This study primarily covers the design and development of an MEMS based accelerometer. Frequency, displacement sensitivity, and capacitance are the subject of analytical modelling; the corresponding values are found to be 7.41kHz, 4.5096∗10−9 m/g, and 0.289pF respectively. COMSOL Multiphysics is used to design the structure of accelerometer and the MATLAB simulator tool is used to analyse the accelerometer. In order to obtain precise results, simulations are done and theoretical calculations are compared. Silicon-on-Insulator Multi-User MEMS Processes (SOIMUMPS) technology is employed to fabricate the accelerometer structure at MEMSCAP foundry, United State. The characterization of the fabricated device is done at CENSE, IISc, Bangalore. The capacitance values on either side of the device obtained from the test results are 0.36pF and 0.85pF when 5 V is applied to the electrodes. The proposed accelerometer is employed in the actuating parts of the sensor due to its properties like linearity and low sensitivity. |
| first_indexed | 2024-03-08T09:35:49Z |
| format | Article |
| id | doaj.art-656861d491194e46bb0d7593e3b29991 |
| institution | Directory Open Access Journal |
| issn | 2708-9967 2708-9975 |
| language | English |
| last_indexed | 2024-03-08T09:35:49Z |
| publishDate | 2024-01-01 |
| publisher | Tamkang University Press |
| record_format | Article |
| series | Journal of Applied Science and Engineering |
| spelling | doaj.art-656861d491194e46bb0d7593e3b299912024-01-30T08:53:38ZengTamkang University PressJournal of Applied Science and Engineering2708-99672708-99752024-01-012732251225710.6180/jase.202403_27(3).0012System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometerVeena.S0H.L Suresh1Newton Rai2Veerapandi N3Veda Sandeep Nagaraj4Department of Electrical and Electronics Engineering, Nitte Meenakshi Institute of Technology, BangaloreDepartment of Electrical and Electronics Engineering, Sir.M Visvesvaraya Institute of Technology, BangaloreMechanical Department, University of Colorado BoulderCentre for Nano Science and Engineering(CeNSE), Indian Institute of Science(IISc), BangaloreTyndall National Institute, University College Cork, IrelandThis study primarily covers the design and development of an MEMS based accelerometer. Frequency, displacement sensitivity, and capacitance are the subject of analytical modelling; the corresponding values are found to be 7.41kHz, 4.5096∗10−9 m/g, and 0.289pF respectively. COMSOL Multiphysics is used to design the structure of accelerometer and the MATLAB simulator tool is used to analyse the accelerometer. In order to obtain precise results, simulations are done and theoretical calculations are compared. Silicon-on-Insulator Multi-User MEMS Processes (SOIMUMPS) technology is employed to fabricate the accelerometer structure at MEMSCAP foundry, United State. The characterization of the fabricated device is done at CENSE, IISc, Bangalore. The capacitance values on either side of the device obtained from the test results are 0.36pF and 0.85pF when 5 V is applied to the electrodes. The proposed accelerometer is employed in the actuating parts of the sensor due to its properties like linearity and low sensitivity.http://jase.tku.edu.tw/articles/jase-202403-27-3-0012mems capacitive accelerometercomsolsoi mumpsfabricationcharacterisationsensitivity |
| spellingShingle | Veena.S H.L Suresh Newton Rai Veerapandi N Veda Sandeep Nagaraj System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer Journal of Applied Science and Engineering mems capacitive accelerometer comsol soi mumps fabrication characterisation sensitivity |
| title | System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer |
| title_full | System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer |
| title_fullStr | System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer |
| title_full_unstemmed | System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer |
| title_short | System level simulation and fabrication of SOI-MEMS differential Capacitive accelerometer |
| title_sort | system level simulation and fabrication of soi mems differential capacitive accelerometer |
| topic | mems capacitive accelerometer comsol soi mumps fabrication characterisation sensitivity |
| url | http://jase.tku.edu.tw/articles/jase-202403-27-3-0012 |
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