Enhancement of gas response of annealed ZnO film for hydrogen gas detection
The mechanism of hydrogen (H2) gas sensor in the range of 50-200 ppm of RF-sputtered annealed zinc oxide (ZnO) and without annealing was studied. The X-ray Diffraction( XRD) results showed that the Zn metal was completely converted to ZnO with a polycrystalline structure. The I–V characte...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2019-02-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/341 |
| _version_ | 1827993291737530368 |
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| author | Thamir A.A. Hassan |
| author_facet | Thamir A.A. Hassan |
| author_sort | Thamir A.A. Hassan |
| collection | DOAJ |
| description |
The mechanism of hydrogen (H2) gas sensor in the range of 50-200 ppm of RF-sputtered annealed zinc oxide (ZnO) and without annealing was studied. The X-ray Diffraction( XRD) results showed that the Zn metal was completely converted to ZnO with a polycrystalline structure. The I–V characteristics of the device (PT/ZnO/Pt) measured at room temperature before and after annealing at 450 oC for4h, from which a linear relationship has been observed. The sensors had a maximum response to H2 at 350 oC for annealing ZnO and showed stable behavior for detecting H2 gases in the range of 50 to 200 ppm. The annealed film exhibited higher response than the film without annealing.. The sensing mechanism was modeled according to the oxygen–vacancy model.
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| first_indexed | 2024-04-10T04:22:47Z |
| format | Article |
| id | doaj.art-6578f82ce11747d19d78d876c4c797cb |
| institution | Directory Open Access Journal |
| issn | 2070-4003 2664-5548 |
| language | English |
| last_indexed | 2024-04-10T04:22:47Z |
| publishDate | 2019-02-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Iraqi Journal of Physics |
| spelling | doaj.art-6578f82ce11747d19d78d876c4c797cb2023-03-10T20:58:37ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482019-02-01122310.30723/ijp.v12i23.341Enhancement of gas response of annealed ZnO film for hydrogen gas detectionThamir A.A. Hassan The mechanism of hydrogen (H2) gas sensor in the range of 50-200 ppm of RF-sputtered annealed zinc oxide (ZnO) and without annealing was studied. The X-ray Diffraction( XRD) results showed that the Zn metal was completely converted to ZnO with a polycrystalline structure. The I–V characteristics of the device (PT/ZnO/Pt) measured at room temperature before and after annealing at 450 oC for4h, from which a linear relationship has been observed. The sensors had a maximum response to H2 at 350 oC for annealing ZnO and showed stable behavior for detecting H2 gases in the range of 50 to 200 ppm. The annealed film exhibited higher response than the film without annealing.. The sensing mechanism was modeled according to the oxygen–vacancy model. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/341RF-sputtering , Zinc oxide, Gas sensor, Oxygen-vacancy model. |
| spellingShingle | Thamir A.A. Hassan Enhancement of gas response of annealed ZnO film for hydrogen gas detection Iraqi Journal of Physics RF-sputtering , Zinc oxide, Gas sensor, Oxygen-vacancy model. |
| title | Enhancement of gas response of annealed ZnO film for hydrogen gas detection |
| title_full | Enhancement of gas response of annealed ZnO film for hydrogen gas detection |
| title_fullStr | Enhancement of gas response of annealed ZnO film for hydrogen gas detection |
| title_full_unstemmed | Enhancement of gas response of annealed ZnO film for hydrogen gas detection |
| title_short | Enhancement of gas response of annealed ZnO film for hydrogen gas detection |
| title_sort | enhancement of gas response of annealed zno film for hydrogen gas detection |
| topic | RF-sputtering , Zinc oxide, Gas sensor, Oxygen-vacancy model. |
| url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/341 |
| work_keys_str_mv | AT thamiraahassan enhancementofgasresponseofannealedznofilmforhydrogengasdetection |