An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors
We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them fo...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9870534/ |
| _version_ | 1828734684294545408 |
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| author | Saranisorn Srikam Worawat Traiwattanapong Pichet Limsuwan Papichaya Chaisakul |
| author_facet | Saranisorn Srikam Worawat Traiwattanapong Pichet Limsuwan Papichaya Chaisakul |
| author_sort | Saranisorn Srikam |
| collection | DOAJ |
| description | We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 μm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects. |
| first_indexed | 2024-04-12T22:52:18Z |
| format | Article |
| id | doaj.art-660c15c951134507ab11f54c75a29bba |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-04-12T22:52:18Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-660c15c951134507ab11f54c75a29bba2022-12-22T03:13:19ZengIEEEIEEE Photonics Journal1943-06552022-01-011451710.1109/JPHOT.2022.32028829870534An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells PhotodetectorsSaranisorn Srikam0Worawat Traiwattanapong1Pichet Limsuwan2Papichaya Chaisakul3https://orcid.org/0000-0001-9250-3956Department of Physics, Faculty of Science, Kasetsart University, Bangkok, ThailandDepartment of Physics, Faculty of Science, Kasetsart University, Bangkok, ThailandDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok, ThailandDepartment of Physics, Faculty of Science, Kasetsart University, Bangkok, ThailandWe report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 μm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects.https://ieeexplore.ieee.org/document/9870534/Waveguidephotodetectorphotonic integrated circuitssilicon photonicsplasmonic |
| spellingShingle | Saranisorn Srikam Worawat Traiwattanapong Pichet Limsuwan Papichaya Chaisakul An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors IEEE Photonics Journal Waveguide photodetector photonic integrated circuits silicon photonics plasmonic |
| title | An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors |
| title_full | An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors |
| title_fullStr | An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors |
| title_full_unstemmed | An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors |
| title_short | An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors |
| title_sort | fdtd investigation of compact and low voltage waveguide integrated plasmonic ge x002f sige multiple quantum wells photodetectors |
| topic | Waveguide photodetector photonic integrated circuits silicon photonics plasmonic |
| url | https://ieeexplore.ieee.org/document/9870534/ |
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