Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I )....

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Bibliographic Details
Main Authors: Avdonin, A., Ivanova, Galina, Nedeoglo, Dumitru, Nedeoglo, Natalia
Format: Article
Language:English
Published: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006-01-01
Series:Moldavian Journal of the Physical Sciences
Online Access:https://mjps.nanotech.md/archive/2006/article/3407

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