Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction
In this investigation, p–Mg<sub>2</sub>Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg<sub>2</sub>Si/Si heterojunction PD is first fabricated...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/18/3230 |
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| author | Hong Yu Rui Deng Zhangjie Mo Shentong Ji Quan Xie |
| author_facet | Hong Yu Rui Deng Zhangjie Mo Shentong Ji Quan Xie |
| author_sort | Hong Yu |
| collection | DOAJ |
| description | In this investigation, p–Mg<sub>2</sub>Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg<sub>2</sub>Si/Si heterojunction PD is first fabricated by transferring MLG to Mg<sub>2</sub>Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg<sub>2</sub>Si/Si and MLG/Mg<sub>2</sub>Si/Si heterojunction PDs, the successful fabrication of the Mg<sub>2</sub>Si/Si and MLG/Mg<sub>2</sub>Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg<sub>2</sub>Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg<sub>2</sub>Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (<i>D</i>*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg<sub>2</sub>Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1–10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg<sub>2</sub>Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg<sub>2</sub>Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices. |
| first_indexed | 2024-03-09T22:58:07Z |
| format | Article |
| id | doaj.art-6656cf3e0c414870ab5c4e020b2934f6 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T22:58:07Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-6656cf3e0c414870ab5c4e020b2934f62023-11-23T18:07:48ZengMDPI AGNanomaterials2079-49912022-09-011218323010.3390/nano12183230Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si HeterojunctionHong Yu0Rui Deng1Zhangjie Mo2Shentong Ji3Quan Xie4College of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, ChinaCollege of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, ChinaCollege of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, ChinaCollege of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, ChinaThe College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, ChinaIn this investigation, p–Mg<sub>2</sub>Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg<sub>2</sub>Si/Si heterojunction PD is first fabricated by transferring MLG to Mg<sub>2</sub>Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg<sub>2</sub>Si/Si and MLG/Mg<sub>2</sub>Si/Si heterojunction PDs, the successful fabrication of the Mg<sub>2</sub>Si/Si and MLG/Mg<sub>2</sub>Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg<sub>2</sub>Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg<sub>2</sub>Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (<i>D</i>*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg<sub>2</sub>Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1–10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg<sub>2</sub>Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg<sub>2</sub>Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices.https://www.mdpi.com/2079-4991/12/18/3230MLGMLG/Mg<sub>2</sub>Si/Si heterojunctionPDsdetection properties |
| spellingShingle | Hong Yu Rui Deng Zhangjie Mo Shentong Ji Quan Xie Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction Nanomaterials MLG MLG/Mg<sub>2</sub>Si/Si heterojunction PDs detection properties |
| title | Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction |
| title_full | Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction |
| title_fullStr | Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction |
| title_full_unstemmed | Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction |
| title_short | Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg<sub>2</sub>Si/Si Heterojunction |
| title_sort | fabrication and characterization of visible to near infrared photodetector based on multilayer graphene mg sub 2 sub si si heterojunction |
| topic | MLG MLG/Mg<sub>2</sub>Si/Si heterojunction PDs detection properties |
| url | https://www.mdpi.com/2079-4991/12/18/3230 |
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