A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes
In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend wavegui...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/8/1530 |
| _version_ | 1797583834447872000 |
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| author | Li Wang Dehai Zhang Jin Meng Haotian Zhu |
| author_facet | Li Wang Dehai Zhang Jin Meng Haotian Zhu |
| author_sort | Li Wang |
| collection | DOAJ |
| description | In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides to eliminate the phase difference between the two output ports of the T-junction power divider, so as to achieve in-phase power combining with a concise structure. The frequency doubler was fabricated on a 50 μm thick AlN high-thermal-conductivity substrate to reduce the impact of the thermal effect on the performance. The measured results show that the doubler exhibits a conversion efficiency of 11–31.3% in the 165–180 GHz band under 350–400 mW of input power, and a 118 mW peak output power with a 31.3% efficiency was measured at 174 GHz `when the input power was 376 mW. A good agreement was achieved between the simulation results and the measured performance of the doubler, which proves the effectiveness of the proposed in-phase power-combining structure. |
| first_indexed | 2024-03-10T23:43:36Z |
| format | Article |
| id | doaj.art-66586fa1b19e494f8ec2a93374e32741 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T23:43:36Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-66586fa1b19e494f8ec2a93374e327412023-11-19T02:13:00ZengMDPI AGMicromachines2072-666X2023-07-01148153010.3390/mi14081530A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky DiodesLi Wang0Dehai Zhang1Jin Meng2Haotian Zhu3The CAS Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaThe CAS Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaThe CAS Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaThe CAS Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaIn this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides to eliminate the phase difference between the two output ports of the T-junction power divider, so as to achieve in-phase power combining with a concise structure. The frequency doubler was fabricated on a 50 μm thick AlN high-thermal-conductivity substrate to reduce the impact of the thermal effect on the performance. The measured results show that the doubler exhibits a conversion efficiency of 11–31.3% in the 165–180 GHz band under 350–400 mW of input power, and a 118 mW peak output power with a 31.3% efficiency was measured at 174 GHz `when the input power was 376 mW. A good agreement was achieved between the simulation results and the measured performance of the doubler, which proves the effectiveness of the proposed in-phase power-combining structure.https://www.mdpi.com/2072-666X/14/8/1530doublerin-phase power combining structurehigh powerSchottky diode |
| spellingShingle | Li Wang Dehai Zhang Jin Meng Haotian Zhu A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes Micromachines doubler in-phase power combining structure high power Schottky diode |
| title | A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes |
| title_full | A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes |
| title_fullStr | A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes |
| title_full_unstemmed | A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes |
| title_short | A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes |
| title_sort | high power 170 ghz in phase power combing frequency doubler based on schottky diodes |
| topic | doubler in-phase power combining structure high power Schottky diode |
| url | https://www.mdpi.com/2072-666X/14/8/1530 |
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