Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic...

Full description

Bibliographic Details
Main Authors: Julia Fidyk, Witold Waliszewski, Piotr Sleczkowski, Adam Kiersnowski, Wojciech Pisula, Tomasz Marszalek
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Polymers
Subjects:
Online Access:https://www.mdpi.com/2073-4360/12/11/2662
_version_ 1797548190642208768
author Julia Fidyk
Witold Waliszewski
Piotr Sleczkowski
Adam Kiersnowski
Wojciech Pisula
Tomasz Marszalek
author_facet Julia Fidyk
Witold Waliszewski
Piotr Sleczkowski
Adam Kiersnowski
Wojciech Pisula
Tomasz Marszalek
author_sort Julia Fidyk
collection DOAJ
description Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN<sub>2</sub>) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C<sub>14</sub>) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN<sub>2</sub> crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.
first_indexed 2024-03-10T14:55:50Z
format Article
id doaj.art-668814bc443743a78b7517cd77dda81f
institution Directory Open Access Journal
issn 2073-4360
language English
last_indexed 2024-03-10T14:55:50Z
publishDate 2020-11-01
publisher MDPI AG
record_format Article
series Polymers
spelling doaj.art-668814bc443743a78b7517cd77dda81f2023-11-20T20:36:33ZengMDPI AGPolymers2073-43602020-11-011211266210.3390/polym12112662Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect TransistorsJulia Fidyk0Witold Waliszewski1Piotr Sleczkowski2Adam Kiersnowski3Wojciech Pisula4Tomasz Marszalek5Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandLeibniz Institute of Polymer Research, Hohe Str. 6, 01069 Dresden, GermanyDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandOrganic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN<sub>2</sub>) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C<sub>14</sub>) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN<sub>2</sub> crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.https://www.mdpi.com/2073-4360/12/11/2662organic electronicsbulk heterojunctioncharge carrier transportorganic field-effect transistorfilm morphology
spellingShingle Julia Fidyk
Witold Waliszewski
Piotr Sleczkowski
Adam Kiersnowski
Wojciech Pisula
Tomasz Marszalek
Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
Polymers
organic electronics
bulk heterojunction
charge carrier transport
organic field-effect transistor
film morphology
title Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_full Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_fullStr Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_full_unstemmed Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_short Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
title_sort switching from electron to hole transport in solution processed organic blend field effect transistors
topic organic electronics
bulk heterojunction
charge carrier transport
organic field-effect transistor
film morphology
url https://www.mdpi.com/2073-4360/12/11/2662
work_keys_str_mv AT juliafidyk switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors
AT witoldwaliszewski switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors
AT piotrsleczkowski switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors
AT adamkiersnowski switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors
AT wojciechpisula switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors
AT tomaszmarszalek switchingfromelectrontoholetransportinsolutionprocessedorganicblendfieldeffecttransistors