Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably tra...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2015-11-01
|
Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.6.225 |
_version_ | 1818586959647342592 |
---|---|
author | Tino Wagner Hannes Beyer Patrick Reissner Philipp Mensch Heike Riel Bernd Gotsmann Andreas Stemmer |
author_facet | Tino Wagner Hannes Beyer Patrick Reissner Philipp Mensch Heike Riel Bernd Gotsmann Andreas Stemmer |
author_sort | Tino Wagner |
collection | DOAJ |
description | Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes. |
first_indexed | 2024-12-16T09:01:15Z |
format | Article |
id | doaj.art-66af9f0e0ee14e78825913fac31e9eae |
institution | Directory Open Access Journal |
issn | 2190-4286 |
language | English |
last_indexed | 2024-12-16T09:01:15Z |
publishDate | 2015-11-01 |
publisher | Beilstein-Institut |
record_format | Article |
series | Beilstein Journal of Nanotechnology |
spelling | doaj.art-66af9f0e0ee14e78825913fac31e9eae2022-12-21T22:37:10ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862015-11-01612193220610.3762/bjnano.6.2252190-4286-6-225Kelvin probe force microscopy for local characterisation of active nanoelectronic devicesTino Wagner0Hannes Beyer1Patrick Reissner2Philipp Mensch3Heike Riel4Bernd Gotsmann5Andreas Stemmer6Nanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandFrequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes.https://doi.org/10.3762/bjnano.6.225capacitive crosstalkfrequency modulationKalman filterKelvin probe force microscopysidebands |
spellingShingle | Tino Wagner Hannes Beyer Patrick Reissner Philipp Mensch Heike Riel Bernd Gotsmann Andreas Stemmer Kelvin probe force microscopy for local characterisation of active nanoelectronic devices Beilstein Journal of Nanotechnology capacitive crosstalk frequency modulation Kalman filter Kelvin probe force microscopy sidebands |
title | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_full | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_fullStr | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_full_unstemmed | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_short | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_sort | kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
topic | capacitive crosstalk frequency modulation Kalman filter Kelvin probe force microscopy sidebands |
url | https://doi.org/10.3762/bjnano.6.225 |
work_keys_str_mv | AT tinowagner kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT hannesbeyer kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT patrickreissner kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT philippmensch kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT heikeriel kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT berndgotsmann kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices AT andreasstemmer kelvinprobeforcemicroscopyforlocalcharacterisationofactivenanoelectronicdevices |