Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably tra...

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Main Authors: Tino Wagner, Hannes Beyer, Patrick Reissner, Philipp Mensch, Heike Riel, Bernd Gotsmann, Andreas Stemmer
Format: Article
Language:English
Published: Beilstein-Institut 2015-11-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.6.225
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author Tino Wagner
Hannes Beyer
Patrick Reissner
Philipp Mensch
Heike Riel
Bernd Gotsmann
Andreas Stemmer
author_facet Tino Wagner
Hannes Beyer
Patrick Reissner
Philipp Mensch
Heike Riel
Bernd Gotsmann
Andreas Stemmer
author_sort Tino Wagner
collection DOAJ
description Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes.
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spelling doaj.art-66af9f0e0ee14e78825913fac31e9eae2022-12-21T22:37:10ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862015-11-01612193220610.3762/bjnano.6.2252190-4286-6-225Kelvin probe force microscopy for local characterisation of active nanoelectronic devicesTino Wagner0Hannes Beyer1Patrick Reissner2Philipp Mensch3Heike Riel4Bernd Gotsmann5Andreas Stemmer6Nanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandIBM Research — Zurich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandNanotechnology Group, ETH Zürich, Säumerstrasse 4, 8803 Rüschlikon, SwitzerlandFrequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes.https://doi.org/10.3762/bjnano.6.225capacitive crosstalkfrequency modulationKalman filterKelvin probe force microscopysidebands
spellingShingle Tino Wagner
Hannes Beyer
Patrick Reissner
Philipp Mensch
Heike Riel
Bernd Gotsmann
Andreas Stemmer
Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
Beilstein Journal of Nanotechnology
capacitive crosstalk
frequency modulation
Kalman filter
Kelvin probe force microscopy
sidebands
title Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
title_full Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
title_fullStr Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
title_full_unstemmed Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
title_short Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
title_sort kelvin probe force microscopy for local characterisation of active nanoelectronic devices
topic capacitive crosstalk
frequency modulation
Kalman filter
Kelvin probe force microscopy
sidebands
url https://doi.org/10.3762/bjnano.6.225
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