Engineering helimagnetism in MnSi thin films
Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typica...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4941316 |
| _version_ | 1811270366680580096 |
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| author | S. L. Zhang R. Chalasani A. A. Baker N.-J. Steinke A. I. Figueroa A. Kohn G. van der Laan T. Hesjedal |
| author_facet | S. L. Zhang R. Chalasani A. A. Baker N.-J. Steinke A. I. Figueroa A. Kohn G. van der Laan T. Hesjedal |
| author_sort | S. L. Zhang |
| collection | DOAJ |
| description | Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications. |
| first_indexed | 2024-04-12T21:59:41Z |
| format | Article |
| id | doaj.art-66c9441d105e4bada3114bd3e9f63491 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T21:59:41Z |
| publishDate | 2016-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-66c9441d105e4bada3114bd3e9f634912022-12-22T03:15:11ZengAIP Publishing LLCAIP Advances2158-32262016-01-0161015217015217-810.1063/1.4941316069601ADVEngineering helimagnetism in MnSi thin filmsS. L. Zhang0R. Chalasani1A. A. Baker2N.-J. Steinke3A. I. Figueroa4A. Kohn5G. van der Laan6T. Hesjedal7Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, United KingdomDepartment of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv, IsraelDepartment of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, United KingdomISIS, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0QX, United KingdomMagnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE, United KingdomDepartment of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv, IsraelMagnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE, United KingdomDepartment of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, United KingdomMagnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.http://dx.doi.org/10.1063/1.4941316 |
| spellingShingle | S. L. Zhang R. Chalasani A. A. Baker N.-J. Steinke A. I. Figueroa A. Kohn G. van der Laan T. Hesjedal Engineering helimagnetism in MnSi thin films AIP Advances |
| title | Engineering helimagnetism in MnSi thin films |
| title_full | Engineering helimagnetism in MnSi thin films |
| title_fullStr | Engineering helimagnetism in MnSi thin films |
| title_full_unstemmed | Engineering helimagnetism in MnSi thin films |
| title_short | Engineering helimagnetism in MnSi thin films |
| title_sort | engineering helimagnetism in mnsi thin films |
| url | http://dx.doi.org/10.1063/1.4941316 |
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