Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrat...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2020-07-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.10.031007 |
| _version_ | 1828959073710637056 |
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| author | Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg |
| author_facet | Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg |
| author_sort | Matija Karalic |
| collection | DOAJ |
| description | Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization. |
| first_indexed | 2024-12-14T09:00:52Z |
| format | Article |
| id | doaj.art-66ddd8e0c4b34f49a9b284c23abf3d13 |
| institution | Directory Open Access Journal |
| issn | 2160-3308 |
| language | English |
| last_indexed | 2024-12-14T09:00:52Z |
| publishDate | 2020-07-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj.art-66ddd8e0c4b34f49a9b284c23abf3d132022-12-21T23:08:49ZengAmerican Physical SocietyPhysical Review X2160-33082020-07-0110303100710.1103/PhysRevX.10.031007Electron-Hole Interference in an Inverted-Band Semiconductor BilayerMatija KaralicAntonio ŠtrkaljMichele MasseroniWei ChenChristopher MittagThomas TschirkyWerner WegscheiderThomas IhnKlaus EnsslinOded ZilberbergElectron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization.http://doi.org/10.1103/PhysRevX.10.031007 |
| spellingShingle | Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer Physical Review X |
| title | Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer |
| title_full | Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer |
| title_fullStr | Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer |
| title_full_unstemmed | Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer |
| title_short | Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer |
| title_sort | electron hole interference in an inverted band semiconductor bilayer |
| url | http://doi.org/10.1103/PhysRevX.10.031007 |
| work_keys_str_mv | AT matijakaralic electronholeinterferenceinaninvertedbandsemiconductorbilayer AT antoniostrkalj electronholeinterferenceinaninvertedbandsemiconductorbilayer AT michelemasseroni electronholeinterferenceinaninvertedbandsemiconductorbilayer AT weichen electronholeinterferenceinaninvertedbandsemiconductorbilayer AT christophermittag electronholeinterferenceinaninvertedbandsemiconductorbilayer AT thomastschirky electronholeinterferenceinaninvertedbandsemiconductorbilayer AT wernerwegscheider electronholeinterferenceinaninvertedbandsemiconductorbilayer AT thomasihn electronholeinterferenceinaninvertedbandsemiconductorbilayer AT klausensslin electronholeinterferenceinaninvertedbandsemiconductorbilayer AT odedzilberberg electronholeinterferenceinaninvertedbandsemiconductorbilayer |