Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure
The γ-ray total dose radiation effects on ferroelectric Al-doped HfO<sub>2</sub> (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were anal...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9110854/ |
| _version_ | 1818566823349583872 |
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| author | Wanli Zhang Guangzhao Wang Minghua Tang Lian Cui Teng Wang Pengyu Su Zhuojun Chen Xiaojiang Long Yongguang Xiao Shaoan Yan |
| author_facet | Wanli Zhang Guangzhao Wang Minghua Tang Lian Cui Teng Wang Pengyu Su Zhuojun Chen Xiaojiang Long Yongguang Xiao Shaoan Yan |
| author_sort | Wanli Zhang |
| collection | DOAJ |
| description | The γ-ray total dose radiation effects on ferroelectric Al-doped HfO<sub>2</sub> (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were analyzed with the increasing total dose from 0 to 1 Mrad (Si). The remnant polarization (Pr) values, the capacitance (C) values and the switching voltage (Vc) of this MFIS gate structure decreased with the increasing total dose. A TCAD model of Metal/HfAlO/SiO<sub>2</sub>/Si (MFIS) was proposed to explain the degradation mechanism of ferroelectric properties of the MFIS structure. We find that the new interface defects caused by radiation can reduce the electric field strength with the increasing total dose, which can significantly influence the irradiation properties of the HfAlO/SiO<sub>2</sub>/n-Si gate structure. These results provide the basis to applications for the HfO<sub>2</sub>-based devices in radiation working environment. |
| first_indexed | 2024-12-14T01:58:33Z |
| format | Article |
| id | doaj.art-66ed3bdaba884e77b714abe9136461dc |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-14T01:58:33Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-66ed3bdaba884e77b714abe9136461dc2022-12-21T23:21:06ZengIEEEIEEE Access2169-35362020-01-01810812110812610.1109/ACCESS.2020.30008659110854Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor StructureWanli Zhang0https://orcid.org/0000-0001-6614-374XGuangzhao Wang1Minghua Tang2Lian Cui3Teng Wang4Pengyu Su5Zhuojun Chen6https://orcid.org/0000-0003-0431-8852Xiaojiang Long7Yongguang Xiao8Shaoan Yan9School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, ChinaSchool of Electronic Information and Engineering, Yangtze Normal University, Chongqing, ChinaSchool of Material Sciences and Engineering, Xiangtan University, Xiangtan, ChinaSchool of Electronic Information and Engineering, Yangtze Normal University, Chongqing, ChinaShanghai Institute of Space Power-Sources, Shanghai, ChinaSchool of Electronic Information and Engineering, Yangtze Normal University, Chongqing, ChinaSchool of Physics and Electronics, Hunan University, Changsha, ChinaSchool of Electronic Information and Engineering, Yangtze Normal University, Chongqing, ChinaSchool of Material Sciences and Engineering, Xiangtan University, Xiangtan, ChinaSchool of Mechanical Engineering, Xiangtan University, Xiangtan, ChinaThe γ-ray total dose radiation effects on ferroelectric Al-doped HfO<sub>2</sub> (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were analyzed with the increasing total dose from 0 to 1 Mrad (Si). The remnant polarization (Pr) values, the capacitance (C) values and the switching voltage (Vc) of this MFIS gate structure decreased with the increasing total dose. A TCAD model of Metal/HfAlO/SiO<sub>2</sub>/Si (MFIS) was proposed to explain the degradation mechanism of ferroelectric properties of the MFIS structure. We find that the new interface defects caused by radiation can reduce the electric field strength with the increasing total dose, which can significantly influence the irradiation properties of the HfAlO/SiO<sub>2</sub>/n-Si gate structure. These results provide the basis to applications for the HfO<sub>2</sub>-based devices in radiation working environment.https://ieeexplore.ieee.org/document/9110854/Metal-ferroelectric-insulator-semiconductor (MFIS)Hafnium Aluminium Oxide (HfAlO)remnant polarizationγ-ray radiationferroelectric memory |
| spellingShingle | Wanli Zhang Guangzhao Wang Minghua Tang Lian Cui Teng Wang Pengyu Su Zhuojun Chen Xiaojiang Long Yongguang Xiao Shaoan Yan Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure IEEE Access Metal-ferroelectric-insulator-semiconductor (MFIS) Hafnium Aluminium Oxide (HfAlO) remnant polarization γ-ray radiation ferroelectric memory |
| title | Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure |
| title_full | Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure |
| title_fullStr | Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure |
| title_full_unstemmed | Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure |
| title_short | Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure |
| title_sort | impact of radiation effect on ferroelectric al doped hfo sub 2 sub metal ferroelectric insulator semiconductor structure |
| topic | Metal-ferroelectric-insulator-semiconductor (MFIS) Hafnium Aluminium Oxide (HfAlO) remnant polarization γ-ray radiation ferroelectric memory |
| url | https://ieeexplore.ieee.org/document/9110854/ |
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