Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure
The γ-ray total dose radiation effects on ferroelectric Al-doped HfO<sub>2</sub> (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were anal...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9110854/ |