Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells
Electromigration in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cell structures has been studied by mapping out electric field/current-induced composition changes using x-ray energy dispersive spectroscopy. Both materials exhibit pronounced segregation in a molten state, with Te moving toward the anode and...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0087570 |
| _version_ | 1828466783601819648 |
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| author | Qiyun Xu Enkui Lian Phoebe Yeoh Marek Skowronski |
| author_facet | Qiyun Xu Enkui Lian Phoebe Yeoh Marek Skowronski |
| author_sort | Qiyun Xu |
| collection | DOAJ |
| description | Electromigration in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cell structures has been studied by mapping out electric field/current-induced composition changes using x-ray energy dispersive spectroscopy. Both materials exhibit pronounced segregation in a molten state, with Te moving toward the anode and Ge and Sb toward the cathode. The width of the transition region from a composition of over 90% Te to over 90% Ge–Sb was 500 nm for an electric field of 1.1 × 107 V/m. In the Ge–Sb-rich end of the cell, Ge precipitates out of the melt, forming almost pure Ge inclusions with a size up to 100 nm. The Ge–Sb–Te segregation and precipitation do not appear to be affected by doping with nitrogen. |
| first_indexed | 2024-12-11T03:55:41Z |
| format | Article |
| id | doaj.art-670a8cfb49a44100a329f90434fc8ea7 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T03:55:41Z |
| publishDate | 2022-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-670a8cfb49a44100a329f90434fc8ea72022-12-22T01:21:48ZengAIP Publishing LLCAIP Advances2158-32262022-06-01126065018065018-710.1063/5.0087570Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cellsQiyun Xu0Enkui Lian1Phoebe Yeoh2Marek Skowronski3Department Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USADepartment Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USAIntel Corporation, 2200 Mission College Blvd., Santa Clara, California 95052, USADepartment Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USAElectromigration in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cell structures has been studied by mapping out electric field/current-induced composition changes using x-ray energy dispersive spectroscopy. Both materials exhibit pronounced segregation in a molten state, with Te moving toward the anode and Ge and Sb toward the cathode. The width of the transition region from a composition of over 90% Te to over 90% Ge–Sb was 500 nm for an electric field of 1.1 × 107 V/m. In the Ge–Sb-rich end of the cell, Ge precipitates out of the melt, forming almost pure Ge inclusions with a size up to 100 nm. The Ge–Sb–Te segregation and precipitation do not appear to be affected by doping with nitrogen.http://dx.doi.org/10.1063/5.0087570 |
| spellingShingle | Qiyun Xu Enkui Lian Phoebe Yeoh Marek Skowronski Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells AIP Advances |
| title | Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells |
| title_full | Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells |
| title_fullStr | Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells |
| title_full_unstemmed | Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells |
| title_short | Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells |
| title_sort | segregation induced ge precipitation in ge2sb2te5 and n doped ge2sb2te5 line cells |
| url | http://dx.doi.org/10.1063/5.0087570 |
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