Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2O3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (100) substrates with 6° miscut toward the [001¯] direc...

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Bibliographic Details
Main Authors:	R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, M. Albrecht
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-02-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5054943

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