Luminescent properties of Sb-doped ZnSe single crystals
Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at r...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2019-12-01
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| Series: | Moldavian Journal of the Physical Sciences |
| Online Access: | https://mjps.nanotech.md/archive/2019/article/98827 |
| _version_ | 1818743430727073792 |
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| author | Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru |
| author_facet | Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru |
| author_sort | Suşchevici, Constantin |
| collection | DOAJ |
| description | Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed. |
| first_indexed | 2024-12-18T02:28:17Z |
| format | Article |
| id | doaj.art-67201c4997704dcfb451a2128b8ef65f |
| institution | Directory Open Access Journal |
| issn | 1810-648X 2537-6365 |
| language | English |
| last_indexed | 2024-12-18T02:28:17Z |
| publishDate | 2019-12-01 |
| publisher | D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| record_format | Article |
| series | Moldavian Journal of the Physical Sciences |
| spelling | doaj.art-67201c4997704dcfb451a2128b8ef65f2022-12-21T21:23:59ZengD.Ghitu Institute of Electronic Engineering and NanotechnologiesMoldavian Journal of the Physical Sciences1810-648X2537-63652019-12-01181-4263098827Luminescent properties of Sb-doped ZnSe single crystalsSuşchevici, ConstantinGoncearenco, EvgheniiNedeoglo, NataliaNedeoglo, DumitruPhotoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed.https://mjps.nanotech.md/archive/2019/article/98827 |
| spellingShingle | Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru Luminescent properties of Sb-doped ZnSe single crystals Moldavian Journal of the Physical Sciences |
| title | Luminescent properties of Sb-doped ZnSe single crystals |
| title_full | Luminescent properties of Sb-doped ZnSe single crystals |
| title_fullStr | Luminescent properties of Sb-doped ZnSe single crystals |
| title_full_unstemmed | Luminescent properties of Sb-doped ZnSe single crystals |
| title_short | Luminescent properties of Sb-doped ZnSe single crystals |
| title_sort | luminescent properties of sb doped znse single crystals |
| url | https://mjps.nanotech.md/archive/2019/article/98827 |
| work_keys_str_mv | AT suscheviciconstantin luminescentpropertiesofsbdopedznsesinglecrystals AT goncearencoevghenii luminescentpropertiesofsbdopedznsesinglecrystals AT nedeoglonatalia luminescentpropertiesofsbdopedznsesinglecrystals AT nedeoglodumitru luminescentpropertiesofsbdopedznsesinglecrystals |