Hydrogen sensor based on field effect transistor with C–Pd layer
ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2020-06-01
|
| Series: | Metrology and Measurement Systems |
| Subjects: | |
| Online Access: | http://journals.pan.pl/dlibra/publication/132777/edition/116015/content |
| _version_ | 1818351217850449920 |
|---|---|
| author | Piotr Firek Sławomir Krawczyk Halina Wronka Elżbieta Czerwosz Jan Szmidt |
| author_facet | Piotr Firek Sławomir Krawczyk Halina Wronka Elżbieta Czerwosz Jan Szmidt |
| author_sort | Piotr Firek |
| collection | DOAJ |
| description | ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C–Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C–Pd layer. The C–Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C–Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C–Pd layer was demonstrated and characterized. |
| first_indexed | 2024-12-13T18:34:14Z |
| format | Article |
| id | doaj.art-672bc2632a224230ab204fb523905160 |
| institution | Directory Open Access Journal |
| issn | 2300-1941 |
| language | English |
| last_indexed | 2024-12-13T18:34:14Z |
| publishDate | 2020-06-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Metrology and Measurement Systems |
| spelling | doaj.art-672bc2632a224230ab204fb5239051602022-12-21T23:35:24ZengPolish Academy of SciencesMetrology and Measurement Systems2300-19412020-06-0127231332110.24425/mms.2020.132777Hydrogen sensor based on field effect transistor with C–Pd layerPiotr Firek0Sławomir Krawczyk1Halina Wronka2 Elżbieta Czerwosz3 Jan Szmidt4Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, PolandŁukasiewicz Research Network Tele- &Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, PolandŁukasiewicz Research Network Tele- &Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, PolandŁukasiewicz Research Network Tele- &Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, PolandWarsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, PolandISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C–Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C–Pd layer. The C–Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C–Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C–Pd layer was demonstrated and characterized.http://journals.pan.pl/dlibra/publication/132777/edition/116015/contentfetc–pd layerhydrogen sensorfield effect transistor |
| spellingShingle | Piotr Firek Sławomir Krawczyk Halina Wronka Elżbieta Czerwosz Jan Szmidt Hydrogen sensor based on field effect transistor with C–Pd layer Metrology and Measurement Systems fet c–pd layer hydrogen sensor field effect transistor |
| title | Hydrogen sensor based on field effect transistor with C–Pd layer |
| title_full | Hydrogen sensor based on field effect transistor with C–Pd layer |
| title_fullStr | Hydrogen sensor based on field effect transistor with C–Pd layer |
| title_full_unstemmed | Hydrogen sensor based on field effect transistor with C–Pd layer |
| title_short | Hydrogen sensor based on field effect transistor with C–Pd layer |
| title_sort | hydrogen sensor based on field effect transistor with c pd layer |
| topic | fet c–pd layer hydrogen sensor field effect transistor |
| url | http://journals.pan.pl/dlibra/publication/132777/edition/116015/content |
| work_keys_str_mv | AT piotrfirek hydrogensensorbasedonfieldeffecttransistorwithcpdlayer AT sławomirkrawczyk hydrogensensorbasedonfieldeffecttransistorwithcpdlayer AT halinawronka hydrogensensorbasedonfieldeffecttransistorwithcpdlayer AT elzbietaczerwosz hydrogensensorbasedonfieldeffecttransistorwithcpdlayer AT janszmidt hydrogensensorbasedonfieldeffecttransistorwithcpdlayer |