Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). In general, the DAB converter bidirectionally transfers power between the primary an...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10384373/ |
| _version_ | 1797348693470347264 |
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| author | Jae-Sub Ko Cheol-Woong Choi Woong Kul Lee Dae-Kyong Kim |
| author_facet | Jae-Sub Ko Cheol-Woong Choi Woong Kul Lee Dae-Kyong Kim |
| author_sort | Jae-Sub Ko |
| collection | DOAJ |
| description | This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). In general, the DAB converter bidirectionally transfers power between the primary and secondary sides using a phase shift angle. The conventional methods calculate the phase shift angle with an assumption of the instantaneous changes in the voltage and current. However, SiC MOSFETs used in a DAB converter have parasitic capacitances such as the input, output, and reverse transfer capacitance which affect the voltage and current leading to inaccurate phase shift angle calculation. For instance, the input parasitic capacitance delays the voltage slew rate between the drain and the source of the SiC MOSFET. Moreover, during the dead time, the output parasitic capacitance of the SiC MOSFET and leakage inductance in the DAB converter resonate, delaying the slew rates of both current and voltage. Therefore, this study analytically quantifies the effect of parasitic capacitances on the performance of the SiC DAB converter and proposes a novel phase shift angle compensation method. The proposed method was validated through simulations and experiments with a 4-kW SiC DAB converter prototype. |
| first_indexed | 2024-03-08T12:09:39Z |
| format | Article |
| id | doaj.art-67663fe7a7334f6d9872911565b508bb |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-08T12:09:39Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-67663fe7a7334f6d9872911565b508bb2024-01-23T00:05:00ZengIEEEIEEE Access2169-35362024-01-01129138915010.1109/ACCESS.2024.335128110384373Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFETJae-Sub Ko0https://orcid.org/0000-0002-8417-6438Cheol-Woong Choi1https://orcid.org/0000-0002-3239-9533Woong Kul Lee2https://orcid.org/0000-0002-2282-6837Dae-Kyong Kim3https://orcid.org/0000-0003-1575-9231Smart Energy Institute, Sunchon National University, Suncheon, Republic of KoreaSmart Energy Institute, Sunchon National University, Suncheon, Republic of KoreaDepartment of Electrical and Computer Engineering, Michigan State University, East Lansing, MI, USASmart Energy Institute, Sunchon National University, Suncheon, Republic of KoreaThis study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). In general, the DAB converter bidirectionally transfers power between the primary and secondary sides using a phase shift angle. The conventional methods calculate the phase shift angle with an assumption of the instantaneous changes in the voltage and current. However, SiC MOSFETs used in a DAB converter have parasitic capacitances such as the input, output, and reverse transfer capacitance which affect the voltage and current leading to inaccurate phase shift angle calculation. For instance, the input parasitic capacitance delays the voltage slew rate between the drain and the source of the SiC MOSFET. Moreover, during the dead time, the output parasitic capacitance of the SiC MOSFET and leakage inductance in the DAB converter resonate, delaying the slew rates of both current and voltage. Therefore, this study analytically quantifies the effect of parasitic capacitances on the performance of the SiC DAB converter and proposes a novel phase shift angle compensation method. The proposed method was validated through simulations and experiments with a 4-kW SiC DAB converter prototype.https://ieeexplore.ieee.org/document/10384373/DAB convertersingle phase shiftSiC MOSFETparasitic capacitance |
| spellingShingle | Jae-Sub Ko Cheol-Woong Choi Woong Kul Lee Dae-Kyong Kim Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET IEEE Access DAB converter single phase shift SiC MOSFET parasitic capacitance |
| title | Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET |
| title_full | Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET |
| title_fullStr | Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET |
| title_full_unstemmed | Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET |
| title_short | Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET |
| title_sort | novel phase shift angle compensation method of dab converter considering parasitic capacitance of sic mosfet |
| topic | DAB converter single phase shift SiC MOSFET parasitic capacitance |
| url | https://ieeexplore.ieee.org/document/10384373/ |
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