47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission
Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towar...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-01-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/8/2/31 |
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| author | Nikolaos-Panteleimon (Pandelis) Diamantopoulos Suguru Yamaoka Takuro Fujii Hidetaka Nishi Koji Takeda Tai Tsuchizawa Takaaki Kakitsuka Shinji Matsuo |
| author_facet | Nikolaos-Panteleimon (Pandelis) Diamantopoulos Suguru Yamaoka Takuro Fujii Hidetaka Nishi Koji Takeda Tai Tsuchizawa Takaaki Kakitsuka Shinji Matsuo |
| author_sort | Nikolaos-Panteleimon (Pandelis) Diamantopoulos |
| collection | DOAJ |
| description | Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25 °C and 0.34 pJ/bit at 50 °C have been achieved for the > 100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems. |
| first_indexed | 2024-03-09T03:30:32Z |
| format | Article |
| id | doaj.art-678b746b4b974f7f8ad2240163dd37af |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T03:30:32Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-678b746b4b974f7f8ad2240163dd37af2023-12-03T14:56:02ZengMDPI AGPhotonics2304-67322021-01-01823110.3390/photonics802003147.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps TransmissionNikolaos-Panteleimon (Pandelis) Diamantopoulos0Suguru Yamaoka1Takuro Fujii2Hidetaka Nishi3Koji Takeda4Tai Tsuchizawa5Takaaki Kakitsuka6Shinji Matsuo7NTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNTT Device Technology Labs, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, JapanNear-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25 °C and 0.34 pJ/bit at 50 °C have been achieved for the > 100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.https://www.mdpi.com/2304-6732/8/2/31directly modulated lasersIII-V on Siphoton-photon resonancedata centers |
| spellingShingle | Nikolaos-Panteleimon (Pandelis) Diamantopoulos Suguru Yamaoka Takuro Fujii Hidetaka Nishi Koji Takeda Tai Tsuchizawa Takaaki Kakitsuka Shinji Matsuo 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission Photonics directly modulated lasers III-V on Si photon-photon resonance data centers |
| title | 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission |
| title_full | 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission |
| title_fullStr | 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission |
| title_full_unstemmed | 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission |
| title_short | 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission |
| title_sort | 47 5 ghz membrane iii v on si directly modulated laser for sub pj bit 100 gbps transmission |
| topic | directly modulated lasers III-V on Si photon-photon resonance data centers |
| url | https://www.mdpi.com/2304-6732/8/2/31 |
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