Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 n...

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Bibliographic Details
Main Authors: Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, Santosh Kumar Vishvakarma
Format: Article
Language:English
Published: Elsevier 2023-07-01
Series:Memories - Materials, Devices, Circuits and Systems
Subjects:
3-D NAND flash memory
Retrograde doping
Short channel effects
Data retention
Online Access:http://www.sciencedirect.com/science/article/pii/S2773064623000087

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