Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy
To study how the Cd/As flux ratio affects the microstructure and transport properties for Cd _3 As _2 films, we used molecular beam epitaxy (MBE) to grow Cd _3 As _2 (224) thin films on CdTe (111)/GaAs (001) virtual substrates. The effects of Cd/As flux ratio, during the grown process, on the electr...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abc048 |
| _version_ | 1797746882016968704 |
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| author | Sheng Xi Zhang Jian Zhang Yan Wu Ting Ting Kang Ning Li X F Qiu P P Chen |
| author_facet | Sheng Xi Zhang Jian Zhang Yan Wu Ting Ting Kang Ning Li X F Qiu P P Chen |
| author_sort | Sheng Xi Zhang |
| collection | DOAJ |
| description | To study how the Cd/As flux ratio affects the microstructure and transport properties for Cd _3 As _2 films, we used molecular beam epitaxy (MBE) to grow Cd _3 As _2 (224) thin films on CdTe (111)/GaAs (001) virtual substrates. The effects of Cd/As flux ratio, during the grown process, on the electrical properties and surface morphology of the sample was studied. The films grown at lower Cd/As flux ratio have higher electron mobility and longer effective dephasing length. With decreasing Cd/As flux ratio, the magnetoresistance (MR) of the film changes from negative to positive. These results show that a lower beam ratio is beneficial to improve the crystal quality. In order to optimize the electrical properties of the films, the effect of annealing on the electron mobility and MR have been studied. After annealing, the MR changes from negative to positive, the electron mobility increase by 8 times, and the MR increase from 15% to 360% at 9 T. These results indicate that annealing is an effective method to optimize the electrical properties of Cd _3 As _2 epitaxial films. |
| first_indexed | 2024-03-12T15:44:03Z |
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| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:44:03Z |
| publishDate | 2020-01-01 |
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| series | Materials Research Express |
| spelling | doaj.art-6801abb8c1cb48da9b515066083df21e2023-08-09T15:51:13ZengIOP PublishingMaterials Research Express2053-15912020-01-0171010640510.1088/2053-1591/abc048Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxySheng Xi Zhang0https://orcid.org/0000-0002-6695-2309Jian Zhang1https://orcid.org/0000-0002-4019-6752Yan Wu2Ting Ting Kang3Ning Li4X F Qiu5P P Chen6State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, People’s Republic of ChinaTo study how the Cd/As flux ratio affects the microstructure and transport properties for Cd _3 As _2 films, we used molecular beam epitaxy (MBE) to grow Cd _3 As _2 (224) thin films on CdTe (111)/GaAs (001) virtual substrates. The effects of Cd/As flux ratio, during the grown process, on the electrical properties and surface morphology of the sample was studied. The films grown at lower Cd/As flux ratio have higher electron mobility and longer effective dephasing length. With decreasing Cd/As flux ratio, the magnetoresistance (MR) of the film changes from negative to positive. These results show that a lower beam ratio is beneficial to improve the crystal quality. In order to optimize the electrical properties of the films, the effect of annealing on the electron mobility and MR have been studied. After annealing, the MR changes from negative to positive, the electron mobility increase by 8 times, and the MR increase from 15% to 360% at 9 T. These results indicate that annealing is an effective method to optimize the electrical properties of Cd _3 As _2 epitaxial films.https://doi.org/10.1088/2053-1591/abc048Cd3As2MBEflux ratioannealingmagnetoresistance |
| spellingShingle | Sheng Xi Zhang Jian Zhang Yan Wu Ting Ting Kang Ning Li X F Qiu P P Chen Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy Materials Research Express Cd3As2 MBE flux ratio annealing magnetoresistance |
| title | Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy |
| title_full | Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy |
| title_fullStr | Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy |
| title_full_unstemmed | Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy |
| title_short | Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy |
| title_sort | effect of cd as flux ratio and annealing process on the transport properties of cd3as2 films grown by molecular beam epitaxy |
| topic | Cd3As2 MBE flux ratio annealing magnetoresistance |
| url | https://doi.org/10.1088/2053-1591/abc048 |
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